Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer
Abstract
Nanoscale multilayer structure TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} has been fabricated on Pt/Ti/SiO{sub 2}/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2}/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO{sub 2} play a crucial role in the resistive switching phenomenon and the introduced TiO{sub 2}/BaTiO{sub 3} interfaces result in the high uniformity of bipolar resistive switching characteristics.
- Authors:
-
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China)
- Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou (China)
- Publication Date:
- OSTI Identifier:
- 22253210
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; CURRENTS; DEPOSITION; ELECTRIC POTENTIAL; LAYERS; NANOSTRUCTURES; OXYGEN; SILICON OXIDES; SOLUTIONS; SPACE CHARGE; SUBSTRATES; TITANATES; TITANIUM OXIDES; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY
Citation Formats
Ma, W. J., Zhang, X. Y., Wang, Ying, Zheng, Yue, Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, Lin, S. P., Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-Sen University, Zhuhai 519082, Luo, J. M., Wang, B., E-mail: zhengy35@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn, and Li, Z. X. Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer. United States: N. p., 2013.
Web. doi:10.1063/1.4852695.
Ma, W. J., Zhang, X. Y., Wang, Ying, Zheng, Yue, Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, Lin, S. P., Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-Sen University, Zhuhai 519082, Luo, J. M., Wang, B., E-mail: zhengy35@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn, & Li, Z. X. Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer. United States. https://doi.org/10.1063/1.4852695
Ma, W. J., Zhang, X. Y., Wang, Ying, Zheng, Yue, Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, Lin, S. P., Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-Sen University, Zhuhai 519082, Luo, J. M., Wang, B., E-mail: zhengy35@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn, and Li, Z. X. 2013.
"Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer". United States. https://doi.org/10.1063/1.4852695.
@article{osti_22253210,
title = {Highly uniform bipolar resistive switching characteristics in TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} multilayer},
author = {Ma, W. J. and Zhang, X. Y. and Wang, Ying and Zheng, Yue and Micro and Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou and Lin, S. P. and Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-Sen University, Zhuhai 519082 and Luo, J. M. and Wang, B., E-mail: zhengy35@mail.sysu.edu.cn, E-mail: wangbiao@mail.sysu.edu.cn and Li, Z. X.},
abstractNote = {Nanoscale multilayer structure TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2} has been fabricated on Pt/Ti/SiO{sub 2}/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO{sub 2}/BaTiO{sub 3}/TiO{sub 2}/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO{sub 2} play a crucial role in the resistive switching phenomenon and the introduced TiO{sub 2}/BaTiO{sub 3} interfaces result in the high uniformity of bipolar resistive switching characteristics.},
doi = {10.1063/1.4852695},
url = {https://www.osti.gov/biblio/22253210},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 103,
place = {United States},
year = {Mon Dec 23 00:00:00 EST 2013},
month = {Mon Dec 23 00:00:00 EST 2013}
}