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Title: Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth

Abstract

In this study, structurally uniform single crystalline PbTe nanowires (NWs) were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grown along the [100] direction. The electrical conductivity σ of a NW with 142 nm in diameter exhibited a semiconducting behavior at 50–300 K. An enhancement of electrical conductivity σ up to 2383 S m{sup −1} at 300 K is much higher than σ [0.44–1526 S m{sup −1}, Chen et al., Appl. Phys. Lett. 103, p023115, (2013)] in previous studies. The room temperature magnetoresistance of the 142 nm NW was ∼0.8% at B = 2 T, which is considerably higher than that [0.2% at B = 2 T, Ovsyannikov et al., Sol. State Comm. 126, 373, (2003)] of the PbTe bulk reported.

Authors:
 [1];  [2];  [2];  [3];  [1];  [2];  [2];  [4];  [2];  [2]; ; ; ;  [4];  [1]
  1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. (China)
  3. (Indonesia)
  4. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
Publication Date:
OSTI Identifier:
22252839
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRON DIFFRACTION; LEAD TELLURIDES; MAGNETORESISTANCE; MONOCRYSTALS; QUANTUM WIRES; STRESSES

Citation Formats

Dedi, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Research Center for Electronics and Telecommunication, Indonesian Institute of Sciences Bandung, Chien, Chia-Hua, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Hsiung, Te-Chih, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Department of Physics, National Taiwan University, Taipei 106, Taiwan, Chen, Yu-Chieh, Huang, Yi-Cheng, Lee, Ping-Chung, Chen, Yang-Yuan, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw, and Lee, Chih-Hao. Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth. United States: N. p., 2014. Web. doi:10.1063/1.4876919.
Dedi, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Research Center for Electronics and Telecommunication, Indonesian Institute of Sciences Bandung, Chien, Chia-Hua, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Hsiung, Te-Chih, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Department of Physics, National Taiwan University, Taipei 106, Taiwan, Chen, Yu-Chieh, Huang, Yi-Cheng, Lee, Ping-Chung, Chen, Yang-Yuan, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw, & Lee, Chih-Hao. Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth. United States. doi:10.1063/1.4876919.
Dedi, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Research Center for Electronics and Telecommunication, Indonesian Institute of Sciences Bandung, Chien, Chia-Hua, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Hsiung, Te-Chih, Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Department of Physics, National Taiwan University, Taipei 106, Taiwan, Chen, Yu-Chieh, Huang, Yi-Cheng, Lee, Ping-Chung, Chen, Yang-Yuan, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw, and Lee, Chih-Hao. Thu . "Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth". United States. doi:10.1063/1.4876919.
@article{osti_22252839,
title = {Structural, electronic transport and magnetoresistance of a 142nm lead telluride nanowire synthesized using stress-induced growth},
author = {Dedi, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw and Institute of Physics, Academia Sinica, Taipei 11529, Taiwan and Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan and Research Center for Electronics and Telecommunication, Indonesian Institute of Sciences Bandung and Chien, Chia-Hua and Institute of Physics, Academia Sinica, Taipei 11529, Taiwan and Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan and Hsiung, Te-Chih and Nano Science and Technology Program, Taiwan International Graduate Program, Institute of Physics, Academia Sinica, Taipei 11529, Taiwan and Department of Physics, National Taiwan University, Taipei 106, Taiwan and Chen, Yu-Chieh and Huang, Yi-Cheng and Lee, Ping-Chung and Chen, Yang-Yuan, E-mail: dediamada@phys.sinica.edu.tw, E-mail: cheny2@phys.sinica.edu.tw and Lee, Chih-Hao},
abstractNote = {In this study, structurally uniform single crystalline PbTe nanowires (NWs) were synthesized using a stress-induced growth. Selected-area electron diffraction patterns show that the PbTe NWs were grown along the [100] direction. The electrical conductivity σ of a NW with 142 nm in diameter exhibited a semiconducting behavior at 50–300 K. An enhancement of electrical conductivity σ up to 2383 S m{sup −1} at 300 K is much higher than σ [0.44–1526 S m{sup −1}, Chen et al., Appl. Phys. Lett. 103, p023115, (2013)] in previous studies. The room temperature magnetoresistance of the 142 nm NW was ∼0.8% at B = 2 T, which is considerably higher than that [0.2% at B = 2 T, Ovsyannikov et al., Sol. State Comm. 126, 373, (2003)] of the PbTe bulk reported.},
doi = {10.1063/1.4876919},
journal = {AIP Advances},
number = 5,
volume = 4,
place = {United States},
year = {Thu May 15 00:00:00 EDT 2014},
month = {Thu May 15 00:00:00 EDT 2014}
}
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