Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)
- The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)
- Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)
A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.
- OSTI ID:
- 22251228
- Journal Information:
- AIP Advances, Vol. 4, Issue 2; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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