Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

Journal Article · Mon Jul 22 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4816660· OSTI ID:22218302

Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay; Kolodzey, James ^[1]; Wielunski, Leszek ^[2]

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1. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)
2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

Single crystal epitaxial Ge{sub 1−x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1−x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 °C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1−x}Sn{sub x} alloys versus the composition of Sn have been determined.

• OSTI ID: 22218302
• Journal Information: Applied Physics Letters, Vol. 103, Issue 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHANNELING
GERMANIUM ALLOYS
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SUBSTRATES
TIN
TIN ALLOYS
X-RAY DIFFRACTION