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Title: Extreme ultraviolet induced defects on few-layer graphene

Abstract

We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.

Authors:
; ;  [1]; ; ;  [2];  [1];  [3]
  1. FOM-Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein (Netherlands)
  2. ASML, De Run 6501, 5504DR Veldhoven (Netherlands)
  3. (Netherlands)
Publication Date:
OSTI Identifier:
22218260
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL BONDS; DENSITY; DOSES; EXTREME ULTRAVIOLET RADIATION; GRAPHENE; HYDROGEN; LAYERS; OXIDATION; OXIDES; PHOTONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Gao, A., Zoethout, E., Lee, C. J., Rizo, P. J., Scaccabarozzi, L., Banine, V., Bijkerk, F., and MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede. Extreme ultraviolet induced defects on few-layer graphene. United States: N. p., 2013. Web. doi:10.1063/1.4817082.
Gao, A., Zoethout, E., Lee, C. J., Rizo, P. J., Scaccabarozzi, L., Banine, V., Bijkerk, F., & MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede. Extreme ultraviolet induced defects on few-layer graphene. United States. doi:10.1063/1.4817082.
Gao, A., Zoethout, E., Lee, C. J., Rizo, P. J., Scaccabarozzi, L., Banine, V., Bijkerk, F., and MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede. Sun . "Extreme ultraviolet induced defects on few-layer graphene". United States. doi:10.1063/1.4817082.
@article{osti_22218260,
title = {Extreme ultraviolet induced defects on few-layer graphene},
author = {Gao, A. and Zoethout, E. and Lee, C. J. and Rizo, P. J. and Scaccabarozzi, L. and Banine, V. and Bijkerk, F. and MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede},
abstractNote = {We use Raman spectroscopy to show that exposing few-layer graphene to extreme ultraviolet (EUV, 13.5 nm) radiation, i.e., relatively low photon energy, results in an increasing density of defects. Furthermore, exposure to EUV radiation in a H{sub 2} background increases the graphene dosage sensitivity, due to reactions caused by the EUV induced hydrogen plasma. X-ray photoelectron spectroscopy results show that the sp{sup 2} bonded carbon fraction decreases while the sp{sup 3} bonded carbon and oxide fraction increases with exposure dose. Our experimental results confirm that even in reducing environment oxidation is still one of the main source of inducing defects.},
doi = {10.1063/1.4817082},
journal = {Journal of Applied Physics},
number = 4,
volume = 114,
place = {United States},
year = {Sun Jul 28 00:00:00 EDT 2013},
month = {Sun Jul 28 00:00:00 EDT 2013}
}
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