Effects of Ga ion-beam irradiation on monolayer graphene

Journal Article · Mon Aug 12 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4818458· OSTI ID:22218230

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei ^[1]; Ge, Daohan ^[1]

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1. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

• OSTI ID: 22218230
• Journal Information: Applied Physics Letters, Vol. 103, Issue 7; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL VAPOR DEPOSITION
COMPRESSION STRENGTH
ELECTRIC CONDUCTIVITY
EQUIPMENT
FABRICATION
FIELD EFFECT TRANSISTORS
FULLERENES
GALLIUM IONS
GRAPHENE
ION BEAMS
IRRADIATION
NONLINEAR PROBLEMS
RAMAN EFFECT
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RED SHIFT
SCANNING ELECTRON MICROSCOPY
STRAINS
VARIATIONS