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Title: Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

Abstract

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Authors:
; ; ; ;  [1];  [2];  [1]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
Publication Date:
OSTI Identifier:
22218131
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; FABRICATION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRAINS; SURFACE TREATMENTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; VALENCE

Citation Formats

Zech, E. S., Chang, A. S., Martin, A. J., Canniff, J. C., Millunchick, J. M., Lin, Y. H., Goldman, R. S., and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets. United States: N. p., 2013. Web. doi:10.1063/1.4818270.
Zech, E. S., Chang, A. S., Martin, A. J., Canniff, J. C., Millunchick, J. M., Lin, Y. H., Goldman, R. S., & Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets. United States. doi:10.1063/1.4818270.
Zech, E. S., Chang, A. S., Martin, A. J., Canniff, J. C., Millunchick, J. M., Lin, Y. H., Goldman, R. S., and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136. Mon . "Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets". United States. doi:10.1063/1.4818270.
@article{osti_22218131,
title = {Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets},
author = {Zech, E. S. and Chang, A. S. and Martin, A. J. and Canniff, J. C. and Millunchick, J. M. and Lin, Y. H. and Goldman, R. S. and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136},
abstractNote = {We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.},
doi = {10.1063/1.4818270},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 103,
place = {United States},
year = {2013},
month = {8}
}