Sulfur passivation of surface electrons in highly Mg-doped InN

Journal Article · Sat Sep 14 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4820483· OSTI ID:22218063

Linhart, W. M.; Veal, T. D. ^[1]; Chai, J. ^[2]; McConville, C. F. ^[3]; Durbin, S. M. ^[2]

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1. Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool, Liverpool L69 4ZF (United Kingdom)
2. Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140 (New Zealand)
3. Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

Electron accumulation with a sheet density greater than 10{sup 13} cm{sup −2} usually occurs at InN surfaces. Here, the effects of treatment with ammonium sulfide ((NH{sub 4}){sub 2}S{sub x}) on the surface electronic properties of highly Mg-doped InN (>4×10{sup 18} cm{sup −3}) have been investigated with high resolution x-ray photoemission spectroscopy. The valence band photoemission spectra show that the surface Fermi level decreases by approximately 0.08 eV with (NH{sub 4}){sub 2}S{sub x} treatment, resulting in a decrease of the downward band bending and up to a 70% reduction in the surface electron sheet density.

• OSTI ID: 22218063
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
APPROXIMATIONS
BENDING
DENSITY
DOPED MATERIALS
ELECTRON DENSITY
ELECTRONS
FERMI LEVEL
INDIUM NITRIDES
MAGNESIUM
PASSIVATION
PHOTOEMISSION
REDUCTION
SEMICONDUCTOR MATERIALS
SHEETS
SULFUR
SURFACES
X-RAY PHOTOELECTRON SPECTROSCOPY