Ga nanoparticle-enhanced photoluminescence of GaAs
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)
We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.
- OSTI ID:
- 22217923
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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