Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

Journal Article · Mon Oct 28 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4828479· OSTI ID:22217884

Niraula, M.; Yasuda, K.; Wajima, Y.; Yamashita, H.; Tsukamoto, Y.; Suzuki, Y.; Matsumoto, M.; Takai, N.; Tsukamoto, Y.; Agata, Y. ^[1]

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1. Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)

Charge transport properties of p-CdTe/n-CdTe/n{sup +}-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n{sup +}-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed.

• OSTI ID: 22217884
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CADMIUM TELLURIDES
CHARGE TRANSPORT
CHEMICAL VAPOR DEPOSITION
ELECTRIC POTENTIAL
P-N JUNCTIONS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SPACE CHARGE
SUBSTRATES
SUPERCONDUCTING JUNCTIONS
TRAPPING
TUNNEL EFFECT
VAPOR PHASE EPITAXY