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Title: Electrical properties of Si/Si interfaces by using surface-activated bonding

Abstract

Electrical properties of n-Si/n-Si, p-Si/n-Si, and p{sup −}-Si/n{sup +}-Si junctions fabricated by using surface-activated-bonding are investigated. The transmission electron microscopy/energy dispersive X-ray spectroscopy of the n-Si/n-Si interfaces reveals no evidence of oxide layers at the interfaces. From the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions, it is found that the interface states, likely to have formed due to the surface activation process using Ar plasma, have a more marked impact on the electrical properties of the p-Si/n-Si junctions. An analysis of the temperature dependence of the I-V characteristics indicates that the properties of carrier transport across the bonding interfaces for reverse-bias voltages in the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions can be explained using the trap-assisted-tunneling and Frenkel-Poole models, respectively.

Authors:
; ; ; ;  [1]
  1. Department of Electrical Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan)
Publication Date:
OSTI Identifier:
22217867
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BONDING; CAPACITANCE; ELECTRIC CONDUCTIVITY; INTERFACES; P-N JUNCTIONS; SUPERCONDUCTING JUNCTIONS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT; X-RAY SPECTROSCOPY

Citation Formats

Liang, J., Miyazaki, T., Morimoto, M., Nishida, S., and Shigekawa, N.. Electrical properties of Si/Si interfaces by using surface-activated bonding. United States: N. p., 2013. Web. doi:10.1063/1.4829676.
Liang, J., Miyazaki, T., Morimoto, M., Nishida, S., & Shigekawa, N.. Electrical properties of Si/Si interfaces by using surface-activated bonding. United States. doi:10.1063/1.4829676.
Liang, J., Miyazaki, T., Morimoto, M., Nishida, S., and Shigekawa, N.. Thu . "Electrical properties of Si/Si interfaces by using surface-activated bonding". United States. doi:10.1063/1.4829676.
@article{osti_22217867,
title = {Electrical properties of Si/Si interfaces by using surface-activated bonding},
author = {Liang, J. and Miyazaki, T. and Morimoto, M. and Nishida, S. and Shigekawa, N.},
abstractNote = {Electrical properties of n-Si/n-Si, p-Si/n-Si, and p{sup −}-Si/n{sup +}-Si junctions fabricated by using surface-activated-bonding are investigated. The transmission electron microscopy/energy dispersive X-ray spectroscopy of the n-Si/n-Si interfaces reveals no evidence of oxide layers at the interfaces. From the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions, it is found that the interface states, likely to have formed due to the surface activation process using Ar plasma, have a more marked impact on the electrical properties of the p-Si/n-Si junctions. An analysis of the temperature dependence of the I-V characteristics indicates that the properties of carrier transport across the bonding interfaces for reverse-bias voltages in the p-Si/n-Si and p{sup −}-Si/n{sup +}-Si junctions can be explained using the trap-assisted-tunneling and Frenkel-Poole models, respectively.},
doi = {10.1063/1.4829676},
journal = {Journal of Applied Physics},
number = 18,
volume = 114,
place = {United States},
year = {Thu Nov 14 00:00:00 EST 2013},
month = {Thu Nov 14 00:00:00 EST 2013}
}
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