Improved visible light driven photoelectrochemical properties of 3C-SiC semiconductor with Pt nanoparticles for hydrogen generation

Journal Article · Mon Nov 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4832333· OSTI ID:22217855

Tae Song, Jun; Kamiya, Masayuki; Iwasaki, Takayuki; Hatano, Mutsuko ^[1]; Mashiko, Hisanori; Ohtomo, Akira ^[2]; Nakamine, Yoshifumi ^[3]

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1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
2. Department of Applied Chemistry, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
3. Program for Leading Graduate Schools, Academy for Co-Creative Education of Environment and Energy Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)

We propose the n-type 3C-SiC with Pt nanoparticles (Pt NPs) as photo-anode for photoelectrochemical hydrogen (H{sub 2}) generation. We found that band-edge structure of 3C-SiC is suitable for H{sub 2} generation, and the property can be optimized by dopant (nitrogen) concentration in 3C-SiC. We also confirmed that Pt NPs enhance photoelectrochemical properties showing 0.2%–0.8% higher Incident Photon-to-Current Efficiency than bare 3C-SiC in visible wavelength despite diminished light absorption. Solar-conversion efficiency increases approximately 6.3 times, and H{sub 2} production is improved by 6.5 times with 33% of Faradaic efficiency. Lastly, 3C-SiC surface corrosion is effectively inhibited.

• OSTI ID: 22217855
• Journal Information: Applied Physics Letters, Vol. 103, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
ABUNDANCE
ANODES
APPROXIMATIONS
CONCENTRATION RATIO
CORROSION
ECOLOGICAL CONCENTRATION
EFFICIENCY
HYDROGEN
INTERSTITIAL HYDROGEN GENERATION
NANOSTRUCTURES
NITROGEN
PHOTONS
PLATINUM
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SURFACES
WAVELENGTHS