Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4828984· OSTI ID:22217803

DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang ^[1]; Zhao, Xin-Hao ^[1]

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1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)

CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

• OSTI ID: 22217803
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CADMIUM TELLURIDES
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
POLYCRYSTALS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SOLAR CELLS
STEADY-STATE CONDITIONS
SUBSTRATES
SURFACES
THIN FILMS
TIME RESOLUTION