skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth

Abstract

ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Å and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Å at a substrate temperature of 800 °C and 6 Å at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—on ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ≤6 Å that coalesce into continuous layers for 8 and 15 Å thickness at 800 °C, and for 6 Å at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Å thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting ofmore » strings of 1–3 nm large SiN{sub x} precipitates along apparent column boundaries in the epitaxial ZrN.« less

Authors:
; ; ;  [1];  [2]
  1. Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)
  2. Nanostructured Materials, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22217781
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; DEPOSITION; EPITAXY; LAYERS; MAGNESIUM OXIDES; MAGNETRONS; NANOSTRUCTURES; PRECIPITATION; SPUTTERING; SUBSTRATES; SURFACES; THICKNESS; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; ZIRCONIUM NITRIDES

Citation Formats

Fallqvist, A., Fager, H., Hultman, L., Persson, P. O. Å., and Ghafoor, N. Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth. United States: N. p., 2013. Web. doi:10.1063/1.4838495.
Fallqvist, A., Fager, H., Hultman, L., Persson, P. O. Å., & Ghafoor, N. Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth. United States. https://doi.org/10.1063/1.4838495
Fallqvist, A., Fager, H., Hultman, L., Persson, P. O. Å., and Ghafoor, N. Sat . "Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth". United States. https://doi.org/10.1063/1.4838495.
@article{osti_22217781,
title = {Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth},
author = {Fallqvist, A. and Fager, H. and Hultman, L. and Persson, P. O. Å. and Ghafoor, N.},
abstractNote = {ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Å and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Å at a substrate temperature of 800 °C and 6 Å at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—on ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ≤6 Å that coalesce into continuous layers for 8 and 15 Å thickness at 800 °C, and for 6 Å at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Å thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting of strings of 1–3 nm large SiN{sub x} precipitates along apparent column boundaries in the epitaxial ZrN.},
doi = {10.1063/1.4838495},
url = {https://www.osti.gov/biblio/22217781}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 22,
volume = 114,
place = {United States},
year = {2013},
month = {12}
}