Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth

doi:https://doi.org/10.1063/1.4838495

Title: Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth

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Abstract

ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Å and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Å at a substrate temperature of 800 °C and 6 Å at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—on ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ≤6 Å that coalesce into continuous layers for 8 and 15 Å thickness at 800 °C, and for 6 Å at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Å thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting ofmore »« less

Authors:

Fallqvist, A.; Fager, H.; Hultman, L.; Persson, P. O. Å. ^[1]; Ghafoor, N. ^[2]

Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)
Nanostructured Materials, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

Publication Date:: 2013-12-14

OSTI Identifier:: 22217781

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; DEPOSITION; EPITAXY; LAYERS; MAGNESIUM OXIDES; MAGNETRONS; NANOSTRUCTURES; PRECIPITATION; SPUTTERING; SUBSTRATES; SURFACES; THICKNESS; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; ZIRCONIUM NITRIDES

Citation Formats


                    Fallqvist, A., Fager, H., Hultman, L., Persson, P. O. Å., and Ghafoor, N. Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4838495.

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                    Fallqvist, A., Fager, H., Hultman, L., Persson, P. O. Å., & Ghafoor, N. Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth.  United States.  https://doi.org/10.1063/1.4838495

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                    Fallqvist, A., Fager, H., Hultman, L., Persson, P. O. Å., and Ghafoor, N. Sat .  
        "Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth".  United States.  https://doi.org/10.1063/1.4838495.

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@article{osti_22217781,

  title        = {Self-organization during growth of ZrN/SiN{sub x} multilayers by epitaxial lateral overgrowth},

  author       = {Fallqvist, A. and Fager, H. and Hultman, L. and Persson, P. O. Å. and Ghafoor, N.},

  abstractNote = {ZrN/SiN{sub x} nanoscale multilayers were deposited on ZrN seed layers grown on top of MgO(001) substrates by dc magnetron sputtering with a constant ZrN thickness of 40 Å and with an intended SiN{sub x} thickness of 2, 4, 6, 8, and 15 Å at a substrate temperature of 800 °C and 6 Å at 500 °C. The films were investigated by X-ray diffraction, high-resolution scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy. The investigations show that the SiN{sub x} is amorphous and that the ZrN layers are crystalline. Growth of epitaxial cubic SiN{sub x}—known to take place on TiN(001)—on ZrN(001) is excluded to the monolayer resolution of this study. During the course of SiN{sub x} deposition, the material segregates to form surface precipitates in discontinuous layers for SiN{sub x} thicknesses ≤6 Å that coalesce into continuous layers for 8 and 15 Å thickness at 800 °C, and for 6 Å at 500 °C. The SiN{sub x} precipitates are aligned vertically. The ZrN layers in turn grow by epitaxial lateral overgrowth on the discontinuous SiN{sub x} in samples deposited at 800 °C with up to 6 Å thick SiN{sub x} layers. Effectively a self-organized nanostructure can be grown consisting of strings of 1–3 nm large SiN{sub x} precipitates along apparent column boundaries in the epitaxial ZrN.},

  doi          = {10.1063/1.4838495},

  url          = {https://www.osti.gov/biblio/22217781},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 22,

  volume       = 114,

  place        = {United States},

  year         = {2013},

  month        = {12}

}

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