The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe{sub 16}N{sub 2} thin films
- Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)
- High Temperature Materials Laboratory, Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)
- Department of Electrical and Computer Engineering, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, 200 Union St SE, Minneapolis, Minnesota 55455 (United States)
Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe{sub 16}N{sub 2} phase within an epitaxial (001) α′-Fe{sub x}N phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe{sub 16}N{sub 2} at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe{sub 16}N{sub 2} on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe{sub 16}N{sub 2} phase by the Ag structure at the interface.
- OSTI ID:
- 22217753
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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