An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4848195· OSTI ID:22217748

Deshpande, Saniya; Bhattacharya, Pallab ^[1]

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1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (λ ∼ 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g{sup (2)}(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.

• OSTI ID: 22217748
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AMBIENT TEMPERATURE
ELECTROLUMINESCENCE
EXCITONS
FABRICATION
GALLIUM NITRIDES
INDIUM COMPOUNDS
JOULE HEATING
JUNCTION DIODES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
P-N JUNCTIONS
PUMPS
QUANTUM DOTS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
STEADY-STATE CONDITIONS
TIME RESOLUTION