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Title: Studies on intrinsic defects related to Zn vacancy in ZnO nanoparticles

Abstract

Graphical abstract: Display Omitted Highlights: ► Williamson–Hall analysis of ZnO indicates strain in the lattice and size is of 20 nm. ► PL shows a broad emission peak in visible range due to native defects. ► Raman active modes corresponding to P6{sub 3}mc and a few additional modes are observed. ► FTIR detects few local vibrational modes of hydrogen attached to zinc vacancies. ► V{sub Zn}-H and Zn + O divacancies are confirmed by PAS. -- Abstract: ZnO being a well known optoelectronic semiconductor, investigations related to the defects are very promising. In this report, we have attempted to detect the defects in ZnO nanoparticles synthesized by the conventional coprecipitation route using various spectroscopic techniques. The broad emission peak observed in photoluminescence spectrum and the non zero slope in Williamson–Hall analysis indicate the defects induced strain in the ZnO lattice. A few additional modes observed in Raman spectrum could be due to the breakdown of the translation symmetry of the lattice caused by defects and/or impurities. The presence of impurities can be ruled out as XRD pattern shows pure wurtzite structure. The presence of the vibrational band related to the Zn vacancies (V{sub Zn}), unintentional hydrogen dopants and their complexmore » defects confirm the defects in ZnO lattice. Positron life time components τ{sub 1} and τ{sub 2} additionally support V{sub Zn} attached to hydrogen and to a cluster of Zn and O di-vacancies respectively.« less

Authors:
 [1];  [2];  [1]
  1. School of Materials Science and Technology, Indian Institute of Technology (BHU), Varanasi, 221005 (India)
  2. UGC-DAE Consortium for Scientific Research, Kolkata Centre (India)
Publication Date:
OSTI Identifier:
22215840
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 48; Journal Issue: 2; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; DEFECTS; DOPED MATERIALS; FOURIER TRANSFORMATION; HEXAGONAL LATTICES; INFRARED SPECTRA; NANOSTRUCTURES; PHOTOLUMINESCENCE; POSITRONS; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Singh, V. P., Das, D., and Rath, Chandana. Studies on intrinsic defects related to Zn vacancy in ZnO nanoparticles. United States: N. p., 2013. Web. doi:10.1016/J.MATERRESBULL.2012.11.026.
Singh, V. P., Das, D., & Rath, Chandana. Studies on intrinsic defects related to Zn vacancy in ZnO nanoparticles. United States. https://doi.org/10.1016/J.MATERRESBULL.2012.11.026
Singh, V. P., Das, D., and Rath, Chandana. Fri . "Studies on intrinsic defects related to Zn vacancy in ZnO nanoparticles". United States. https://doi.org/10.1016/J.MATERRESBULL.2012.11.026.
@article{osti_22215840,
title = {Studies on intrinsic defects related to Zn vacancy in ZnO nanoparticles},
author = {Singh, V. P. and Das, D. and Rath, Chandana},
abstractNote = {Graphical abstract: Display Omitted Highlights: ► Williamson–Hall analysis of ZnO indicates strain in the lattice and size is of 20 nm. ► PL shows a broad emission peak in visible range due to native defects. ► Raman active modes corresponding to P6{sub 3}mc and a few additional modes are observed. ► FTIR detects few local vibrational modes of hydrogen attached to zinc vacancies. ► V{sub Zn}-H and Zn + O divacancies are confirmed by PAS. -- Abstract: ZnO being a well known optoelectronic semiconductor, investigations related to the defects are very promising. In this report, we have attempted to detect the defects in ZnO nanoparticles synthesized by the conventional coprecipitation route using various spectroscopic techniques. The broad emission peak observed in photoluminescence spectrum and the non zero slope in Williamson–Hall analysis indicate the defects induced strain in the ZnO lattice. A few additional modes observed in Raman spectrum could be due to the breakdown of the translation symmetry of the lattice caused by defects and/or impurities. The presence of impurities can be ruled out as XRD pattern shows pure wurtzite structure. The presence of the vibrational band related to the Zn vacancies (V{sub Zn}), unintentional hydrogen dopants and their complex defects confirm the defects in ZnO lattice. Positron life time components τ{sub 1} and τ{sub 2} additionally support V{sub Zn} attached to hydrogen and to a cluster of Zn and O di-vacancies respectively.},
doi = {10.1016/J.MATERRESBULL.2012.11.026},
url = {https://www.osti.gov/biblio/22215840}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 2,
volume = 48,
place = {United States},
year = {2013},
month = {2}
}