Studies on intrinsic defects related to Zn vacancy in ZnO nanoparticles

Journal Article · Fri Feb 15 00:00:00 EST 2013 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.11.026· OSTI ID:22215840

Singh, V. P. ^[1]; Das, D. ^[2]; Rath, Chandana ^[1]

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1. School of Materials Science and Technology, Indian Institute of Technology (BHU), Varanasi, 221005 (India)
2. UGC-DAE Consortium for Scientific Research, Kolkata Centre (India)

Graphical abstract: Display Omitted Highlights: ► Williamson–Hall analysis of ZnO indicates strain in the lattice and size is of 20 nm. ► PL shows a broad emission peak in visible range due to native defects. ► Raman active modes corresponding to P6{sub 3}mc and a few additional modes are observed. ► FTIR detects few local vibrational modes of hydrogen attached to zinc vacancies. ► V{sub Zn}-H and Zn + O divacancies are confirmed by PAS. -- Abstract: ZnO being a well known optoelectronic semiconductor, investigations related to the defects are very promising. In this report, we have attempted to detect the defects in ZnO nanoparticles synthesized by the conventional coprecipitation route using various spectroscopic techniques. The broad emission peak observed in photoluminescence spectrum and the non zero slope in Williamson–Hall analysis indicate the defects induced strain in the ZnO lattice. A few additional modes observed in Raman spectrum could be due to the breakdown of the translation symmetry of the lattice caused by defects and/or impurities. The presence of impurities can be ruled out as XRD pattern shows pure wurtzite structure. The presence of the vibrational band related to the Zn vacancies (V{sub Zn}), unintentional hydrogen dopants and their complex defects confirm the defects in ZnO lattice. Positron life time components τ{sub 1} and τ{sub 2} additionally support V{sub Zn} attached to hydrogen and to a cluster of Zn and O di-vacancies respectively.

• OSTI ID: 22215840
• Journal Information: Materials Research Bulletin, Vol. 48, Issue 2; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
DEFECTS
DOPED MATERIALS
FOURIER TRANSFORMATION
HEXAGONAL LATTICES
INFRARED SPECTRA
NANOSTRUCTURES
PHOTOLUMINESCENCE
POSITRONS
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION
ZINC OXIDES