Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

Journal Article · Sat Dec 15 00:00:00 EST 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.09.009· OSTI ID:22215682

Shi, Feng ^[1]; Xue, Chengshan ^[1]

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1. College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

Graphical abstract: Display Omitted Highlights: ► GaN nanorods have been prepared on Si substrates by magnetron sputtering. ► GaN nanorods are single crystal with hexagonal wurtzite structure. ► GaN nanorods are high-quality crystalline after ammoniating at 950 °C for 15 min. ► Ammoniating temperatures and times affect the growth of GaN nanorods significantly. -- Abstract: GaN nanorods have been successfully prepared on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga{sub 2}O{sub 3}/Tb thin films. X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), FT-IR spectrophotometer, scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), and photoluminescence (PL) spectroscopy were used to characterize the microstructures, morphologies compositions and optical properties of the GaN samples. The results demonstrate that the nanorods are single crystal GaN with hexagonal wurtzite structure and high-quality crystalline after ammoniating at 950 °C for 15 min, which have the size of 100–150 nm in diameter. Ammoniating temperatures and times affect the growth of GaN nanorods significantly. The growth procedure mainly follows the Tb catalyst-assisted VLS mechanism.

• OSTI ID: 22215682
• Journal Information: Materials Research Bulletin, Vol. 47, Issue 12; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
FOURIER TRANSFORMATION
GALLIUM NITRIDES
GALLIUM OXIDES
INFRARED SPECTRA
MAGNETRONS
MICROSTRUCTURE
MONOCRYSTALS
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SPUTTERING
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY