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Title: Low temperature solid-state synthesis of nanocrystalline gallium nitride

Abstract

Graphical abstract: Display Omitted Highlights: ► GaN nanocrystalline was prepared via a solid-state reacion at relatively low temperature. ► The sizes and crystallinities of the GaN samples obtained at the different temperatures are investigated. ► The GaN sample has oxidation resistance and good thermal stability below 1000 °C. -- Abstract: Nanocrystalline gallium nitride was synthesized by a solid-state reaction of metallic magnesium powder, gallium sesquioxide and sodium amide in a stainless steel autoclave at a relatively low temperature (400–550 °C). The structures and morphologies of the obtained products were derived from X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). XRD patterns indicated that the products were hexagonal GaN (JCPDS card no. 76-0703). The influence of reaction temperature on size of the products was studied by XRD and TEM. Furthermore, the thermal stability and oxidation resistance of the nanocrystalline GaN were also investigated. It had good thermal stability and oxidation resistance below 800 °C in air.

Authors:
 [1]; ; ; ; ;  [1]
  1. Hefei National Laboratory for Physical Science at Microscale and Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026 (China)
Publication Date:
OSTI Identifier:
22215638
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTALS; GALLIUM NITRIDES; NANOSTRUCTURES; OXIDATION; SOLIDS; STAINLESS STEELS; SYNTHESIS; TEMPERATURE RANGE 0065-0273 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Wang, Liangbiao, E-mail: wlb6641@163.com, Shi, Liang, Li, Qianwen, Si, Lulu, Zhu, Yongchun, and Qian, Yitai. Low temperature solid-state synthesis of nanocrystalline gallium nitride. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.06.027.
Wang, Liangbiao, E-mail: wlb6641@163.com, Shi, Liang, Li, Qianwen, Si, Lulu, Zhu, Yongchun, & Qian, Yitai. Low temperature solid-state synthesis of nanocrystalline gallium nitride. United States. doi:10.1016/J.MATERRESBULL.2012.06.027.
Wang, Liangbiao, E-mail: wlb6641@163.com, Shi, Liang, Li, Qianwen, Si, Lulu, Zhu, Yongchun, and Qian, Yitai. Thu . "Low temperature solid-state synthesis of nanocrystalline gallium nitride". United States. doi:10.1016/J.MATERRESBULL.2012.06.027.
@article{osti_22215638,
title = {Low temperature solid-state synthesis of nanocrystalline gallium nitride},
author = {Wang, Liangbiao, E-mail: wlb6641@163.com and Shi, Liang and Li, Qianwen and Si, Lulu and Zhu, Yongchun and Qian, Yitai},
abstractNote = {Graphical abstract: Display Omitted Highlights: ► GaN nanocrystalline was prepared via a solid-state reacion at relatively low temperature. ► The sizes and crystallinities of the GaN samples obtained at the different temperatures are investigated. ► The GaN sample has oxidation resistance and good thermal stability below 1000 °C. -- Abstract: Nanocrystalline gallium nitride was synthesized by a solid-state reaction of metallic magnesium powder, gallium sesquioxide and sodium amide in a stainless steel autoclave at a relatively low temperature (400–550 °C). The structures and morphologies of the obtained products were derived from X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). XRD patterns indicated that the products were hexagonal GaN (JCPDS card no. 76-0703). The influence of reaction temperature on size of the products was studied by XRD and TEM. Furthermore, the thermal stability and oxidation resistance of the nanocrystalline GaN were also investigated. It had good thermal stability and oxidation resistance below 800 °C in air.},
doi = {10.1016/J.MATERRESBULL.2012.06.027},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}