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Title: Sol–gel synthesis and electrical characterization of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films

Abstract

Graphical abstract: Display Omitted Highlights: ► Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates prepared by sol–gel. ► Ethylacetoacetate (EAA) used as a replacement for highly toxic 2-methoxyethanol. ► 0.4 μm thick BLT film has 2P{sub r} ∼ 21 μC/cm{sup 2} and 2E{sub c} of ∼195 kV/cm at 300 kV/cm, εr = 140 and tan δ = 0.025, 1 kHz. ► BLT films with improved dielectric response when prepared form ethylacetoacetate (EAA). -- Abstract: Lanthanum bismuth titanate (Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}) (BLT) thin films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates were prepared by sol–gel using ethylacetoacetate (EAA) as a replacement for the highly toxic 2-methoxyethanol. EAA is used as a modifier to stabilize the metal alkoxide. At 450 °C films are amorphous. After annealing at 650 °C films are crystalline and present good dielectric and ferroelectric properties. A 0.4 μm thick BLT film exhibits 2P{sub r} of ∼21 μC/cm{sup 2} and 2E{sub c} of ∼195 kV/cm at 300 kV/cm. The dielectric constant and dielectric losses of these BLT films at 1 kHz are 140 and 0.025, respectively.

Authors:
; ;  [1];  [1]
  1. Department of Ceramics and Glass Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal)
Publication Date:
OSTI Identifier:
22215626
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH; FERROELECTRIC MATERIALS; LANTHANUM; PERMITTIVITY; SILICON OXIDES; SUBSTRATES; SYNTHESIS; THIN FILMS; TITANATES; TITANIUM OXIDES

Citation Formats

Wu, Aiying, Soares, M. Rosa, Miranda Salvado, Isabel M., and Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt. Sol–gel synthesis and electrical characterization of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.04.033.
Wu, Aiying, Soares, M. Rosa, Miranda Salvado, Isabel M., & Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt. Sol–gel synthesis and electrical characterization of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films. United States. doi:10.1016/J.MATERRESBULL.2012.04.033.
Wu, Aiying, Soares, M. Rosa, Miranda Salvado, Isabel M., and Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt. Thu . "Sol–gel synthesis and electrical characterization of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films". United States. doi:10.1016/J.MATERRESBULL.2012.04.033.
@article{osti_22215626,
title = {Sol–gel synthesis and electrical characterization of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films},
author = {Wu, Aiying and Soares, M. Rosa and Miranda Salvado, Isabel M. and Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt},
abstractNote = {Graphical abstract: Display Omitted Highlights: ► Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates prepared by sol–gel. ► Ethylacetoacetate (EAA) used as a replacement for highly toxic 2-methoxyethanol. ► 0.4 μm thick BLT film has 2P{sub r} ∼ 21 μC/cm{sup 2} and 2E{sub c} of ∼195 kV/cm at 300 kV/cm, εr = 140 and tan δ = 0.025, 1 kHz. ► BLT films with improved dielectric response when prepared form ethylacetoacetate (EAA). -- Abstract: Lanthanum bismuth titanate (Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}) (BLT) thin films on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates were prepared by sol–gel using ethylacetoacetate (EAA) as a replacement for the highly toxic 2-methoxyethanol. EAA is used as a modifier to stabilize the metal alkoxide. At 450 °C films are amorphous. After annealing at 650 °C films are crystalline and present good dielectric and ferroelectric properties. A 0.4 μm thick BLT film exhibits 2P{sub r} of ∼21 μC/cm{sup 2} and 2E{sub c} of ∼195 kV/cm at 300 kV/cm. The dielectric constant and dielectric losses of these BLT films at 1 kHz are 140 and 0.025, respectively.},
doi = {10.1016/J.MATERRESBULL.2012.04.033},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}