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Title: Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

Abstract

Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.

Authors:
; ; ; ;  [1];  [2];  [1]
  1. Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, M.S. (India)
  2. Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, M.S. (India)
Publication Date:
OSTI Identifier:
22215584
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SULFIDES; DEPOSITION; DEPOSITS; ELECTRIC CONDUCTIVITY; OPTICAL PROPERTIES; PHOTOSENSITIVITY; QUANTUM DOTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SUBSTRATES; SYNTHESIS; THIN FILMS

Citation Formats

Shaikh, Shaheed U., Desale, Dipalee J., Siddiqui, Farha Y., Ghosh, Arindam, Birajadar, Ravikiran B., Ghule, Anil V., and Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com. Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.07.009.
Shaikh, Shaheed U., Desale, Dipalee J., Siddiqui, Farha Y., Ghosh, Arindam, Birajadar, Ravikiran B., Ghule, Anil V., & Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com. Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications. United States. doi:10.1016/J.MATERRESBULL.2012.07.009.
Shaikh, Shaheed U., Desale, Dipalee J., Siddiqui, Farha Y., Ghosh, Arindam, Birajadar, Ravikiran B., Ghule, Anil V., and Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com. Thu . "Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications". United States. doi:10.1016/J.MATERRESBULL.2012.07.009.
@article{osti_22215584,
title = {Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications},
author = {Shaikh, Shaheed U. and Desale, Dipalee J. and Siddiqui, Farha Y. and Ghosh, Arindam and Birajadar, Ravikiran B. and Ghule, Anil V. and Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com},
abstractNote = {Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature using modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.},
doi = {10.1016/J.MATERRESBULL.2012.07.009},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}