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Title: Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy

Abstract

Highlights: ► CdS/n-Si device was fabricated as a heterostructure. ► AFM was used to examine the structure of CdS/n-Si. ► Complex impedance Z′and Z″were calculated. ► AC conductivity was explained by the power law relation. ► CBH model was used to describe the AC conduction mechanism. -- Abstract: CdS/n-Si device was fabricated via depositing CdS thin film onto pre-cleaned n-silicon substrates. The atomic force microscope was used to examine the crystal size of the deposited films and its roughness. The AC conductivity and the real part of complex impedance Z′as a function of frequency at different temperatures were studied. The AC conductivity dependence of the applied frequency was explained on the basis of the power law relation. The bulk resistance has been calculated at different temperatures from the complex impedance Z″. The temperature dependence of capacitance for CdS/n-Si device at different frequencies was also investigated.

Authors:
 [1];  [2];  [3];  [2];  [4]
  1. Physics Department, Faculty of Science, Helwan University, Cairo (Egypt)
  2. (Saudi Arabia)
  3. Nano-Science and Semiconductor Labs., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt)
  4. Physics Department, Faculty of Science, Firat University, Elazig (Turkey)
Publication Date:
OSTI Identifier:
22215578
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CADMIUM SULFIDES; DEPOSITS; FREQUENCY DEPENDENCE; NANOSTRUCTURES; SPECTROSCOPY; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS

Citation Formats

El-Gendy, Y.A., Umm Al-Qura University, University college, Physics Department, Alqunfoza, Yahia, I.S., E-mail: dr_isyahia@yahoo.com, Department of Physics, Faculty of Science, King Khaled University, P.O. Box 9004, Abha, and Yakuphanoglu, F. Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.07.017.
El-Gendy, Y.A., Umm Al-Qura University, University college, Physics Department, Alqunfoza, Yahia, I.S., E-mail: dr_isyahia@yahoo.com, Department of Physics, Faculty of Science, King Khaled University, P.O. Box 9004, Abha, & Yakuphanoglu, F. Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy. United States. doi:10.1016/J.MATERRESBULL.2012.07.017.
El-Gendy, Y.A., Umm Al-Qura University, University college, Physics Department, Alqunfoza, Yahia, I.S., E-mail: dr_isyahia@yahoo.com, Department of Physics, Faculty of Science, King Khaled University, P.O. Box 9004, Abha, and Yakuphanoglu, F. Thu . "Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy". United States. doi:10.1016/J.MATERRESBULL.2012.07.017.
@article{osti_22215578,
title = {Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy},
author = {El-Gendy, Y.A. and Umm Al-Qura University, University college, Physics Department, Alqunfoza and Yahia, I.S., E-mail: dr_isyahia@yahoo.com and Department of Physics, Faculty of Science, King Khaled University, P.O. Box 9004, Abha and Yakuphanoglu, F.},
abstractNote = {Highlights: ► CdS/n-Si device was fabricated as a heterostructure. ► AFM was used to examine the structure of CdS/n-Si. ► Complex impedance Z′and Z″were calculated. ► AC conductivity was explained by the power law relation. ► CBH model was used to describe the AC conduction mechanism. -- Abstract: CdS/n-Si device was fabricated via depositing CdS thin film onto pre-cleaned n-silicon substrates. The atomic force microscope was used to examine the crystal size of the deposited films and its roughness. The AC conductivity and the real part of complex impedance Z′as a function of frequency at different temperatures were studied. The AC conductivity dependence of the applied frequency was explained on the basis of the power law relation. The bulk resistance has been calculated at different temperatures from the complex impedance Z″. The temperature dependence of capacitance for CdS/n-Si device at different frequencies was also investigated.},
doi = {10.1016/J.MATERRESBULL.2012.07.017},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}