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Title: Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films

Abstract

Highlights: ► Cd{sub 1−x}Zn{sub x}Se thin films were deposited using SILAR method. ► The electron effective mass, refractive index, dielectric constant values were calculated by using the energy bandgap values as a function of the zinc concentration (x). ► The resistivity and activation energy changed as a function of the zinc concentration (x). -- Abstract: Cd{sub 1−x}Zn{sub x}Se thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m{sub e}*/m{sub o}), refractive index (n), optical static and high frequency dielectric constants (ε{sub o}, ε{sub ∞}) values were calculated by usingmore » the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10{sup 5} and 10{sup 7} Ω cm with increasing zinc concentration at room temperature.« less

Authors:
 [1];  [2];  [3];  [4]
  1. Department of Electrical and Electronic, Engineering Faculty, Erzincan University, Erzincan (Turkey)
  2. Department of Physics, Science and Art Faculty, Erzincan University, Erzincan (Turkey)
  3. Department of Material Engineering, Engineering and Natural Sciences Faculty, Yıldırım Beyazıt University, Ankara (Turkey)
  4. Department of Physics, Science Faculty, Atatürk University, Erzurum (Turkey)
Publication Date:
OSTI Identifier:
22215577
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; ADSORPTION; EFFECTIVE MASS; PERMITTIVITY; POLYCRYSTALS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SYNTHESIS; THIN FILMS; X-RAY DIFFRACTION; ZINC

Citation Formats

Akaltun, Yunus, Yıldırım, M. Ali, E-mail: mayildirim@erzincan.edu.tr, Ateş, Aytunç, and Yıldırım, Muhammet. Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.07.018.
Akaltun, Yunus, Yıldırım, M. Ali, E-mail: mayildirim@erzincan.edu.tr, Ateş, Aytunç, & Yıldırım, Muhammet. Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films. United States. doi:10.1016/J.MATERRESBULL.2012.07.018.
Akaltun, Yunus, Yıldırım, M. Ali, E-mail: mayildirim@erzincan.edu.tr, Ateş, Aytunç, and Yıldırım, Muhammet. Thu . "Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films". United States. doi:10.1016/J.MATERRESBULL.2012.07.018.
@article{osti_22215577,
title = {Zinc concentration effect on structural, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films},
author = {Akaltun, Yunus and Yıldırım, M. Ali, E-mail: mayildirim@erzincan.edu.tr and Ateş, Aytunç and Yıldırım, Muhammet},
abstractNote = {Highlights: ► Cd{sub 1−x}Zn{sub x}Se thin films were deposited using SILAR method. ► The electron effective mass, refractive index, dielectric constant values were calculated by using the energy bandgap values as a function of the zinc concentration (x). ► The resistivity and activation energy changed as a function of the zinc concentration (x). -- Abstract: Cd{sub 1−x}Zn{sub x}Se thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd{sub 1−x}Zn{sub x}Se thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m{sub e}*/m{sub o}), refractive index (n), optical static and high frequency dielectric constants (ε{sub o}, ε{sub ∞}) values were calculated by using the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10{sup 5} and 10{sup 7} Ω cm with increasing zinc concentration at room temperature.},
doi = {10.1016/J.MATERRESBULL.2012.07.018},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}