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Title: Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method

Abstract

Highlights: ► First report on InGaN NPs by chemical co-precipitation method. ► There is no phase separation in InGaN NPs. ► Both NPs are suitable for optoelectronic devices in the visible region. ► First experimental observation of phonon mode at 272 cm{sup −1} for GaN NPs. ► First report on μ-Raman analysis for InGaN NPs. -- Abstract: A facile method for the synthesis of gallium nitride (GaN) and indium gallium nitride (InGaN) nanoparticles (NPs) has been reported by simple chemical co-precipitation method. The average diameters of the GaN and InGaN NPs were 12 nm and 38 nm respectively. GaN NPs show high crystalline quality with hexagonal structure while InGaN NPs exhibits some cubic inclusion by X-ray diffraction. Room-temperature photoluminescence analysis shows the near-band edge emission at 3.43 eV for GaN and a strong blue emission at 3.0 eV for In{sub 0.4}Ga{sub 0.6}N NPs. The E{sub 2}{sup H} phonon peaks from micro-Raman scattering at 567 cm{sup −1} for GaN and 564 cm{sup −1} for InGaN confirms the wurtzite nature of both the NPs. In addition, we have also assigned some other phonon modes of GaN associated with zone boundary K point of the Brillouin zone which is not experimentally observed formore » their bulk counterparts.« less

Authors:
; ;  [1];  [2];  [1]
  1. Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)
  2. Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai, Tamil Nadu (India)
Publication Date:
OSTI Identifier:
22215569
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; BRILLOUIN ZONES; GALLIUM NITRIDES; NANOSTRUCTURES; OPTICAL PROPERTIES; PEAKS; PHOTOLUMINESCENCE; RAMAN EFFECT; RAMAN SPECTROSCOPY; SYNTHESIS; X-RAY DIFFRACTION

Citation Formats

Gopalakrishnan, M., Purushothaman, V., Venkatesh, P. Sundara, Ramakrishnan, V., and Jeganathan, K., E-mail: kjeganathan@yahoo.com. Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.07.031.
Gopalakrishnan, M., Purushothaman, V., Venkatesh, P. Sundara, Ramakrishnan, V., & Jeganathan, K., E-mail: kjeganathan@yahoo.com. Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method. United States. doi:10.1016/J.MATERRESBULL.2012.07.031.
Gopalakrishnan, M., Purushothaman, V., Venkatesh, P. Sundara, Ramakrishnan, V., and Jeganathan, K., E-mail: kjeganathan@yahoo.com. Thu . "Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method". United States. doi:10.1016/J.MATERRESBULL.2012.07.031.
@article{osti_22215569,
title = {Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method},
author = {Gopalakrishnan, M. and Purushothaman, V. and Venkatesh, P. Sundara and Ramakrishnan, V. and Jeganathan, K., E-mail: kjeganathan@yahoo.com},
abstractNote = {Highlights: ► First report on InGaN NPs by chemical co-precipitation method. ► There is no phase separation in InGaN NPs. ► Both NPs are suitable for optoelectronic devices in the visible region. ► First experimental observation of phonon mode at 272 cm{sup −1} for GaN NPs. ► First report on μ-Raman analysis for InGaN NPs. -- Abstract: A facile method for the synthesis of gallium nitride (GaN) and indium gallium nitride (InGaN) nanoparticles (NPs) has been reported by simple chemical co-precipitation method. The average diameters of the GaN and InGaN NPs were 12 nm and 38 nm respectively. GaN NPs show high crystalline quality with hexagonal structure while InGaN NPs exhibits some cubic inclusion by X-ray diffraction. Room-temperature photoluminescence analysis shows the near-band edge emission at 3.43 eV for GaN and a strong blue emission at 3.0 eV for In{sub 0.4}Ga{sub 0.6}N NPs. The E{sub 2}{sup H} phonon peaks from micro-Raman scattering at 567 cm{sup −1} for GaN and 564 cm{sup −1} for InGaN confirms the wurtzite nature of both the NPs. In addition, we have also assigned some other phonon modes of GaN associated with zone boundary K point of the Brillouin zone which is not experimentally observed for their bulk counterparts.},
doi = {10.1016/J.MATERRESBULL.2012.07.031},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}