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Title: A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping

Abstract

Highlights: ► We investigated the effect of ex situ annealing on InGaAs/GaAs QDIP with InAlGaAs layer. ► As-grown defect was removed by using post-growth annealing treatment. ► Increase in the compressive strain due to annealing is calculated from XRD curve. ► Three-fold enhancement in responsivity is observed in the QDIPs annealed at 650 °C. ► Two-fold enhancement in D* is observed sample annealed at 650 °C compared to as grown. -- Abstract: The effect of post-growth rapid thermal annealing on 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector (QDIP) with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping has been investigated. Transmission electron microscopy showed some as-grown defects were removed by post growth annealing treatment. An increase in the compressive strain in the heterostructure due to annealing was identified from X-ray diffraction curve. A two-color photoresponse in the long-wave region (8.5 and 10.2 μm) was observed in both as-grown device and those annealed at 650 °C temperature. A three-fold enhancement in peak responsivity was observed in the QDIPs annealed at 650 °C (1.19 A/W) compared to that in the as-grown (0.34 A/W). Detectivity also increased by two fold from as-grown to 650 °C annealed device. The changes are attributed to the removalmore » of as-grown defects and dislocations during epitaxial growth. These removals changed the confinement potential profile, which resulted in an improvement in the detectivity and responsivity of the annealed sample.« less

Authors:
 [1];  [1]
  1. Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra (India)
Publication Date:
OSTI Identifier:
22215568
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Adhikary, Sourav, and Chakrabarti, Subhananda, E-mail: subhanandachakrabarti@gmail.com. A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.07.032.
Adhikary, Sourav, & Chakrabarti, Subhananda, E-mail: subhanandachakrabarti@gmail.com. A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping. United States. doi:10.1016/J.MATERRESBULL.2012.07.032.
Adhikary, Sourav, and Chakrabarti, Subhananda, E-mail: subhanandachakrabarti@gmail.com. Thu . "A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping". United States. doi:10.1016/J.MATERRESBULL.2012.07.032.
@article{osti_22215568,
title = {A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping},
author = {Adhikary, Sourav and Chakrabarti, Subhananda, E-mail: subhanandachakrabarti@gmail.com},
abstractNote = {Highlights: ► We investigated the effect of ex situ annealing on InGaAs/GaAs QDIP with InAlGaAs layer. ► As-grown defect was removed by using post-growth annealing treatment. ► Increase in the compressive strain due to annealing is calculated from XRD curve. ► Three-fold enhancement in responsivity is observed in the QDIPs annealed at 650 °C. ► Two-fold enhancement in D* is observed sample annealed at 650 °C compared to as grown. -- Abstract: The effect of post-growth rapid thermal annealing on 35-layer In{sub 0.50}Ga{sub 0.50}As/GaAs quantum dot infrared photodetector (QDIP) with quaternary In{sub 0.21}Al{sub 0.21}Ga{sub 0.58}As capping has been investigated. Transmission electron microscopy showed some as-grown defects were removed by post growth annealing treatment. An increase in the compressive strain in the heterostructure due to annealing was identified from X-ray diffraction curve. A two-color photoresponse in the long-wave region (8.5 and 10.2 μm) was observed in both as-grown device and those annealed at 650 °C temperature. A three-fold enhancement in peak responsivity was observed in the QDIPs annealed at 650 °C (1.19 A/W) compared to that in the as-grown (0.34 A/W). Detectivity also increased by two fold from as-grown to 650 °C annealed device. The changes are attributed to the removal of as-grown defects and dislocations during epitaxial growth. These removals changed the confinement potential profile, which resulted in an improvement in the detectivity and responsivity of the annealed sample.},
doi = {10.1016/J.MATERRESBULL.2012.07.032},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}