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Title: Pulsed electrodeposition and characterization of Bi{sub 2}Te{sub 3−y}Se{sub y} films

Abstract

Highlights: ► Bi{sub 2}Te{sub 3−y}Se{sub y} films synthesized by pulsed electrodeposition. ► The thermoelectric properties of the film were measured at room temperature. ► The films show much better properties then galvanostatically deposited film. -- Abstract: Bi{sub 2}Te{sub 3−y}Se{sub y} films were synthesized by pulsed electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous acidic solution at room temperature. The films were deposited at the same average current density but different cathodic current density. The crystal structure, surface morphology and elemental composition of the films were investigated. Smooth and compact Bi{sub 2}Te{sub 3−y}Se{sub y} films were obtained. As the cathodic current density increased, the grain size of the films decreased. The electrical resistivity and Seebeck coefficient of each Bi{sub 2}Te{sub 3−y}Se{sub y} film were measured after the film being transferred onto a non-conductive rubberized fabric support. The films showed n-type conduction, with Seebeck coefficient in the range of ∼−84 to −92 μV/K and electrical resistivity in the range of 102.9–109.4 μΩ m. The films showed much better thermoelectric properties compared with the film galvanostatically deposited at the same average current density.

Authors:
 [1];  [1];  [2]; ;  [1]
  1. Functional Materials Research Laboratory, Tongji University, 1239 Siping Road, Shanghai 200092 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22215564
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH TELLURIDES; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; FILMS; GRAIN SIZE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THERMOELECTRIC PROPERTIES; X-RAY DIFFRACTION

Citation Formats

Zou, Z.G., Cai, K.F., E-mail: kfcai@tongji.edu.cn, State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, Chen, S., and Qin, Z. Pulsed electrodeposition and characterization of Bi{sub 2}Te{sub 3−y}Se{sub y} films. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.07.036.
Zou, Z.G., Cai, K.F., E-mail: kfcai@tongji.edu.cn, State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, Chen, S., & Qin, Z. Pulsed electrodeposition and characterization of Bi{sub 2}Te{sub 3−y}Se{sub y} films. United States. doi:10.1016/J.MATERRESBULL.2012.07.036.
Zou, Z.G., Cai, K.F., E-mail: kfcai@tongji.edu.cn, State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, Chen, S., and Qin, Z. Thu . "Pulsed electrodeposition and characterization of Bi{sub 2}Te{sub 3−y}Se{sub y} films". United States. doi:10.1016/J.MATERRESBULL.2012.07.036.
@article{osti_22215564,
title = {Pulsed electrodeposition and characterization of Bi{sub 2}Te{sub 3−y}Se{sub y} films},
author = {Zou, Z.G. and Cai, K.F., E-mail: kfcai@tongji.edu.cn and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 and Chen, S. and Qin, Z.},
abstractNote = {Highlights: ► Bi{sub 2}Te{sub 3−y}Se{sub y} films synthesized by pulsed electrodeposition. ► The thermoelectric properties of the film were measured at room temperature. ► The films show much better properties then galvanostatically deposited film. -- Abstract: Bi{sub 2}Te{sub 3−y}Se{sub y} films were synthesized by pulsed electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous acidic solution at room temperature. The films were deposited at the same average current density but different cathodic current density. The crystal structure, surface morphology and elemental composition of the films were investigated. Smooth and compact Bi{sub 2}Te{sub 3−y}Se{sub y} films were obtained. As the cathodic current density increased, the grain size of the films decreased. The electrical resistivity and Seebeck coefficient of each Bi{sub 2}Te{sub 3−y}Se{sub y} film were measured after the film being transferred onto a non-conductive rubberized fabric support. The films showed n-type conduction, with Seebeck coefficient in the range of ∼−84 to −92 μV/K and electrical resistivity in the range of 102.9–109.4 μΩ m. The films showed much better thermoelectric properties compared with the film galvanostatically deposited at the same average current density.},
doi = {10.1016/J.MATERRESBULL.2012.07.036},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 11,
volume = 47,
place = {United States},
year = {2012},
month = {11}
}