Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.04.120· OSTI ID:22215538

Lee, Byung Kook ^[1]; Jung, Eunae; Kim, Seok Hwan; Moon, Dae Chul; Lee, Sun Sook; Park, Bo Keun ^[1]; Hwang, Jin Ha ^[2]; Chung, Taek-Mo; Kim, Chang Gyoun ^[1]; An, Ki-Seok ^[1]

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1. Thin Film Materials Research Team, Korea Research Institute of Chemical Technology, Yuseong, P. O. Box 107, Daejeon 305-600 (Korea, Republic of)
2. Department of Material Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)

Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO{sub 2}. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10{sup 6} while the device mobility values were increased from 2.31 cm{sup 2}/V s to 6.24 cm{sup 2}/V s upon increasing the deposition temperature of the tin oxide films.

• OSTI ID: 22215538
• Journal Information: Materials Research Bulletin, Vol. 47, Issue 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL PROPERTIES
DEPOSITION
DEPOSITS
LAYERS
NANOSTRUCTURES
PLASMA
THIN FILMS
TIN OXIDES