Optical properties of post-annealed ZnO:Al thin films studied by spectroscopic ellipsometry

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2012.04.111· OSTI ID:22215518

Hwang, Y. H.; Kim, H. M. ^[1]; Park, H. Y. ^[2]

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1. Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
2. Semiconductor Applications, Ulsan College, Ulsan 680-749 (Korea, Republic of)

In this paper, effects of the thermal annealing on the structural, electrical, and optical properties of Al-doped ZnO (ZnO:Al) thin films prepared by reactive radio-frequency sputtering were investigated. From the X-ray diffraction observations, the orientation of ZnO:Al films was found to be a c-axis in the hexagonal structure. The optical properties of the films were investigated by optical transmittance and spectroscopic ellipsometry characterization. Based on Tauc–Lorentz model, the optical constants of ZnO:Al films were extracted in the photon energy ranging from 1.0 to 4.5 eV. Our result showed that the refractive index and extinction coefficient of the films changed consistently with annealing temperature.

• OSTI ID: 22215518
• Journal Information: Materials Research Bulletin, Vol. 47, Issue 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DOPED MATERIALS
ELLIPSOMETRY
REFRACTIVE INDEX
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES