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Title: Solution-deposited GdCeO{sub x} thin films: Microstructure, band structure, and dielectric property

Abstract

Highlights: ► Microstructural and electrical properties of sol–gel-deposited GdCeO{sub x} thin films with different mixing ratios. ► Ce incorporation enhanced crystallization and refractive index, reduced hysteresis, and increased dielectric constant. ► Bandgap gradually decreased with increasing Ce, which was primarily affected by VBO reduction. -- Abstract: The microstructural and electrical properties of solution-deposited GdCeO{sub x} dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd{sub 2}O{sub 3} film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO{sub x} film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.

Authors:
 [1]; ;  [2];  [1]
  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  2. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22215108
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 6; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALLIZATION; DEPOSITS; DIELECTRIC MATERIALS; ENERGY-LOSS SPECTROSCOPY; GADOLINIUM OXIDES; MICROSTRUCTURE; MIXING RATIO; PERMITTIVITY; REFRACTIVE INDEX; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Lee, Myung Soo, Park, Sang Han, Cho, Mann-Ho, and Kim, Hyoungsub, E-mail: hsubkim@skku.edu. Solution-deposited GdCeO{sub x} thin films: Microstructure, band structure, and dielectric property. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.02.048.
Lee, Myung Soo, Park, Sang Han, Cho, Mann-Ho, & Kim, Hyoungsub, E-mail: hsubkim@skku.edu. Solution-deposited GdCeO{sub x} thin films: Microstructure, band structure, and dielectric property. United States. doi:10.1016/J.MATERRESBULL.2012.02.048.
Lee, Myung Soo, Park, Sang Han, Cho, Mann-Ho, and Kim, Hyoungsub, E-mail: hsubkim@skku.edu. Fri . "Solution-deposited GdCeO{sub x} thin films: Microstructure, band structure, and dielectric property". United States. doi:10.1016/J.MATERRESBULL.2012.02.048.
@article{osti_22215108,
title = {Solution-deposited GdCeO{sub x} thin films: Microstructure, band structure, and dielectric property},
author = {Lee, Myung Soo and Park, Sang Han and Cho, Mann-Ho and Kim, Hyoungsub, E-mail: hsubkim@skku.edu},
abstractNote = {Highlights: ► Microstructural and electrical properties of sol–gel-deposited GdCeO{sub x} thin films with different mixing ratios. ► Ce incorporation enhanced crystallization and refractive index, reduced hysteresis, and increased dielectric constant. ► Bandgap gradually decreased with increasing Ce, which was primarily affected by VBO reduction. -- Abstract: The microstructural and electrical properties of solution-deposited GdCeO{sub x} dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd{sub 2}O{sub 3} film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO{sub x} film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.},
doi = {10.1016/J.MATERRESBULL.2012.02.048},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 6,
volume = 47,
place = {United States},
year = {2012},
month = {6}
}