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Title: Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

Abstract

Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.

Authors:
 [1];  [2];  [1];  [1];  [2];  [1];  [3];  [1]
  1. Materials Research Centre, Indian Institute of Science, Bangalore 560 012 (India)
  2. (India)
  3. Central Research Laboratory, Bharat Electronics, Bangalore 560 013 (India)
Publication Date:
OSTI Identifier:
22215095
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 47; Journal Issue: 6; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; DOPED MATERIALS; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; SPECTROSCOPY; TEMPERATURE DEPENDENCE

Citation Formats

Kumar, Mahesh, Central Research Laboratory, Bharat Electronics, Bangalore 560 013, Bhat, Thirumaleshwara N., Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore 560 013, Rajpalke, Mohana K., Kalghatgi, A.T., and Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE. United States: N. p., 2012. Web. doi:10.1016/J.MATERRESBULL.2012.03.016.
Kumar, Mahesh, Central Research Laboratory, Bharat Electronics, Bangalore 560 013, Bhat, Thirumaleshwara N., Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore 560 013, Rajpalke, Mohana K., Kalghatgi, A.T., & Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE. United States. doi:10.1016/J.MATERRESBULL.2012.03.016.
Kumar, Mahesh, Central Research Laboratory, Bharat Electronics, Bangalore 560 013, Bhat, Thirumaleshwara N., Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore 560 013, Rajpalke, Mohana K., Kalghatgi, A.T., and Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in. Fri . "Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE". United States. doi:10.1016/J.MATERRESBULL.2012.03.016.
@article{osti_22215095,
title = {Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE},
author = {Kumar, Mahesh and Central Research Laboratory, Bharat Electronics, Bangalore 560 013 and Bhat, Thirumaleshwara N. and Roul, Basanta and Central Research Laboratory, Bharat Electronics, Bangalore 560 013 and Rajpalke, Mohana K. and Kalghatgi, A.T. and Krupanidhi, S.B., E-mail: sbk@mrc.iisc.ernet.in},
abstractNote = {Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.},
doi = {10.1016/J.MATERRESBULL.2012.03.016},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 6,
volume = 47,
place = {United States},
year = {2012},
month = {6}
}