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Title: Microstructural, electrical and optical properties of indium tin oxide (ITO) nanoparticles synthesized by co-precipitation method

Journal Article · · Materials Research Bulletin
 [1]
  1. School of Advanced Materials and Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

Highlights: Black-Right-Pointing-Pointer The grain size of the ITO is decreased from 28.7 to 9.0 nm by increasing Sn dopant. Black-Right-Pointing-Pointer The strain values increased with the incorporation of Sn in In{sub 2}O{sub 3} host lattice. Black-Right-Pointing-Pointer The lower resistivity of 4.9 {Omega} cm is obtained for 10 at.% Sn doped ITO. Black-Right-Pointing-Pointer The band gap varies from 3.62 to 3.89 eV with dopant concentration of Sn. -- Abstract: In the present study, the synthesis of Tin doped indium oxide (ITO) nanopowder at different compositions (In/Sn = 0, 5, 10, 15 at %) was carried out by co-precipitation method. The decomposition of precipitated indium tin acetylacetonate precursor to form In{sub 2}O{sub 3}-SnO{sub 2} (Sn{sub 1-x}In{sub x}O{sub 2}) at 400 Degree-Sign C was confirmed by the thermal and FTIR studies. The changes in strain and grain size of the synthesized particle with respect to dopant concentration were determined from the X-ray diffraction (XRD) analysis. Transmission electron microscopy (TEM) images support to confirm the grain size. The optical properties on ITO nanoparticles were analyzed with UV-visible spectroscopy, and band gap was found to vary from 3.62 to 3.89 eV with Sn dopant concentration. This variation was ascribed to the quantum confinement effect.

OSTI ID:
22212498
Journal Information:
Materials Research Bulletin, Vol. 47, Issue 4; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English