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Title: Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation

Abstract

Highlights: {yields} Goethite modified by boron was prepared by sol-gel method in presence of boron acid at the low temperature. {yields} B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. {yields} The results showed that semiconductor photocatalytic reaction mechanism should exist in the process of aniline degradation with goethite and B-goethite as photocatalyst. -- Abstract: In the present study, goethite and goethite doped with boron (B-goethite) were employed to detect the presence or absence of semiconductor photocatalytic reaction mechanism in the reaction systems. B-goethite was prepared by sol-gel method in presence of boron acid in order to improve its photocatalystic efficiency under the ultraviolet and visible light irradiation. The optical properties of goethite and B-goethite were characterized by ultraviolet and visible absorption spectra and the result indicated that B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. Degradation of aniline was investigated in presence of goethite and B-goethite in aqueous solution. It was found that the B-goethite photocatalyst exhibited enhanced ultraviolet and visible light photocatalytic activity in degradation of aniline compared with the pristine goethite. The photocatalytic degradation mechanism ofmore » B-goethite was discussed.« less

Authors:
 [1];  [1];  [1]; ; ;  [2]
  1. Laboratory of Plant Nutrition and Ecological Environment Research, Centre for Microelement Research of Huazhong Agricultural University, Key Laboratory of Subtropical Agriculture and Environment, Ministry of Agriculture, Wuhan 430070 (China)
  2. China Institute of Water Resources and Hydropower Research, Beijing 100038 (China)
Publication Date:
OSTI Identifier:
22212219
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 46; Journal Issue: 8; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ABSORPTION SPECTRA; ANILINE; AQUEOUS SOLUTIONS; BORON; DOPED MATERIALS; GOETHITE; IRRADIATION; OPTICAL PROPERTIES; OXIDES; PHOTOCATALYSIS; PHOTOELECTRON SPECTROSCOPY; REACTION KINETICS; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS

Citation Formats

Liu, Guanglong, Liao, Shuijiao, College of Basic Sciences of Huazhong Agricultural University, Wuhan 430070, Zhu, Duanwei, Liu, Linghua, Cheng, Dongsheng, and Zhou, Huaidong. Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation. United States: N. p., 2011. Web. doi:10.1016/J.MATERRESBULL.2011.03.033.
Liu, Guanglong, Liao, Shuijiao, College of Basic Sciences of Huazhong Agricultural University, Wuhan 430070, Zhu, Duanwei, Liu, Linghua, Cheng, Dongsheng, & Zhou, Huaidong. Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation. United States. https://doi.org/10.1016/J.MATERRESBULL.2011.03.033
Liu, Guanglong, Liao, Shuijiao, College of Basic Sciences of Huazhong Agricultural University, Wuhan 430070, Zhu, Duanwei, Liu, Linghua, Cheng, Dongsheng, and Zhou, Huaidong. 2011. "Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation". United States. https://doi.org/10.1016/J.MATERRESBULL.2011.03.033.
@article{osti_22212219,
title = {Photodegradation of aniline by goethite doped with boron under ultraviolet and visible light irradiation},
author = {Liu, Guanglong and Liao, Shuijiao and College of Basic Sciences of Huazhong Agricultural University, Wuhan 430070 and Zhu, Duanwei and Liu, Linghua and Cheng, Dongsheng and Zhou, Huaidong},
abstractNote = {Highlights: {yields} Goethite modified by boron was prepared by sol-gel method in presence of boron acid at the low temperature. {yields} B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. {yields} The results showed that semiconductor photocatalytic reaction mechanism should exist in the process of aniline degradation with goethite and B-goethite as photocatalyst. -- Abstract: In the present study, goethite and goethite doped with boron (B-goethite) were employed to detect the presence or absence of semiconductor photocatalytic reaction mechanism in the reaction systems. B-goethite was prepared by sol-gel method in presence of boron acid in order to improve its photocatalystic efficiency under the ultraviolet and visible light irradiation. The optical properties of goethite and B-goethite were characterized by ultraviolet and visible absorption spectra and the result indicated that B-goethite has slight red shift in the band gap transition beside their stronger light absorption compared with pristine goethite. Degradation of aniline was investigated in presence of goethite and B-goethite in aqueous solution. It was found that the B-goethite photocatalyst exhibited enhanced ultraviolet and visible light photocatalytic activity in degradation of aniline compared with the pristine goethite. The photocatalytic degradation mechanism of B-goethite was discussed.},
doi = {10.1016/J.MATERRESBULL.2011.03.033},
url = {https://www.osti.gov/biblio/22212219}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 8,
volume = 46,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2011},
month = {Mon Aug 15 00:00:00 EDT 2011}
}