Characterization of nanostructured photosensitive (NiS){sub x}(CdS){sub (1-x)} composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route

Journal Article · Fri Jul 15 00:00:00 EDT 2011 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2011.03.016· OSTI ID:22212193

Bargal, A. N. ^[1]

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1. Nanostructured Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, Amravati 444604, Maharashtra (India)

Highlights: {yields} Thin films of (NiS){sub x}(CdS){sub (1-x)} with variable composition (x = 1 to 0) were deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. {yields} The structural, surface morphological and electrical characterizations of the as deposited and annealed films were studied. {yields} The bandgap and activation energy of annealed (NiS){sub x}(CdS){sub (1-x)} film decrease with improvement in photosensitive nature. -- Abstract: Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS){sub x}(CdS){sub (1-x)} with variable composition (x = 1-0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS){sub x}(CdS){sub (1-x)} films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS){sub x}(CdS){sub (1-x)} thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS){sub x}(CdS){sub (1-x)} film decrease with improvement in photosensitive nature.

• OSTI ID: 22212193
• Journal Information: Materials Research Bulletin, Vol. 46, Issue 7; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ADSORPTION
CADMIUM SULFIDES
COMPOSITE MATERIALS
DEPOSITS
ELECTRICAL PROPERTIES
GLASS
LAYERS
NANOSTRUCTURES
NICKEL SULFIDES
OPTICAL PROPERTIES
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
SYNTHESIS
THIN FILMS
TRIGONAL LATTICES
X-RAY DIFFRACTION