Features of the stress-strain state of Si/SiO{sub 2}/Ge heterostructures with germanium nanoislands of a limited density

Journal Article · Thu Aug 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613080113· OSTI ID:22210585

Kuryliuk, V. V., E-mail: [e-mail]; Korotchenkov, O. A., E-mail: [e-mail] ^[1]

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1. Kyiv National University, Physics Faculty (Ukraine)

Within the elastic continuum model, with the use of the finite-element method, the stress-strain state of silicon-germanium heterostructures with semispherical germanium islands grown on an oxidized silicon surface is calculated. It is shown that as the density of islands is increased to limiting values, in the SiGe structure with open quantum dots the value and spatial distribution of the elastic-strain fields significantly change. The results of theoretical calculation allow the heterostructure portions with the maximum variation in the stress-strain state to be determined. The position of such a portions can be controlled by changing the density of islands.

• OSTI ID: 22210585
• Journal Information: Semiconductors, Vol. 47, Issue 8; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
DENSITY
FINITE ELEMENT METHOD
GERMANIUM
GERMANIUM SILICIDES
QUANTUM DOTS
SILICA
SILICON
SILICON OXIDES
SPATIAL DISTRIBUTION
STRAINS
STRESSES
SURFACES