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Title: Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

Abstract

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Authors:
; ; ; ; ;  [1]; ; ;  [2]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  2. Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)
Publication Date:
OSTI Identifier:
22210583
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 47; Journal Issue: 8; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC POTENTIAL; GALLIUM ANTIMONIDES; LUMINESCENCE; PHOTODETECTORS; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; QUANTUM WELLS; SUBSTRATES; VAPOR PHASE EPITAXY

Citation Formats

Mikhailova, M. P., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Ivanov, E. V., Konovalov, G. G., Grebentshikova, E. A., Yakovlev, Yu. P., Hulicius, E., Hospodkova, A., and Pangrac, Y. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy. United States: N. p., 2013. Web. doi:10.1134/S1063782613080137.
Mikhailova, M. P., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Ivanov, E. V., Konovalov, G. G., Grebentshikova, E. A., Yakovlev, Yu. P., Hulicius, E., Hospodkova, A., & Pangrac, Y. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy. United States. doi:10.1134/S1063782613080137.
Mikhailova, M. P., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Ivanov, E. V., Konovalov, G. G., Grebentshikova, E. A., Yakovlev, Yu. P., Hulicius, E., Hospodkova, A., and Pangrac, Y. Thu . "Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy". United States. doi:10.1134/S1063782613080137.
@article{osti_22210583,
title = {Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy},
author = {Mikhailova, M. P. and Andreev, I. A., E-mail: igor@iropt9.ioffe.ru and Ivanov, E. V. and Konovalov, G. G. and Grebentshikova, E. A. and Yakovlev, Yu. P. and Hulicius, E. and Hospodkova, A. and Pangrac, Y.},
abstractNote = {The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.},
doi = {10.1134/S1063782613080137},
journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 47,
place = {United States},
year = {2013},
month = {8}
}