Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Journal Article · Tue Oct 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613100230· OSTI ID:22210487

Golygin, I. Yu.; Shirapov, S. B.; Romanov, I. S.; Khludkov, S. S.; Tolbanov, O. P. ^[1]

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1. Tomsk State University (Russian Federation)

The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10-400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.

• OSTI ID: 22210487
• Journal Information: Semiconductors, Vol. 47, Issue 10; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CURRENT DENSITY
ELECTRIC POTENTIAL
ELECTRON BEAM INJECTION
ELECTRONS
GALLIUM NITRIDES
LIGHT EMITTING DIODES
QUANTUM WELLS
TEMPERATURE DEPENDENCE