Features of the electroluminescence spectra of quantum-confined silicon p{sup +}-n heterojunctions in the infrared spectral region

Journal Article · Fri Nov 15 00:00:00 EST 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613110067· OSTI ID:22210435

Bagraev, N. T.; Klyachkin, L. E.; Malyarenko, A. M. ^[1]; Mashkov, V. A. ^[2]

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1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
2. Saint Petersburg State Polytechnical University (Russian Federation)

The results of studying the characteristics of optical emission in various regions of quantum-confined silicon p{sup +}-n heterojunctions heavily doped with boron are analyzed. The results obtained allow one to conclude that near-infrared electroluminescence arises near the heterointerface between the nanostructured wide-gap silicon p{sup +}-barrier heavily doped with boron and n-type silicon (100), the formation of which included the active involvement of boron dipole centers.

• OSTI ID: 22210435
• Journal Information: Semiconductors, Vol. 47, Issue 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
BORON
DIPOLES
DOPED MATERIALS
ELECTROLUMINESCENCE
HETEROJUNCTIONS
NANOSTRUCTURES
SILICON
SPECTRA