Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells

Journal Article · Tue Feb 15 00:00:00 EST 2011 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2010.11.014· OSTI ID:22209991

Han, Junfeng ^[1]; Liao, Cheng ^[1]; Jiang, Tao ^[1]; Fu, Ganhua; Krishnakumar, V.; Spanheimer, C.; Haindl, G. ^[2]; Zhao, Kui ^[1]; Klein, A.; Jaegermann, W. ^[2]

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1. State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871 (China)
2. Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany)

Graphical abstract: From XPS core level spectras, compared with as-depositing CdS (sample A), the Fermi level is shifting closer to the conduction band after annealing treatment in the oxygen (sample B) while it is shifting closer to the valence band after annealing treatment in the argon-hydrogen (sample C). That might be the main reason of the different performance of the final devices. The open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen, while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Research highlights: {yields} Two different methods (oxidation and reduction) were used to anneal CdS films for CdTe solar cells. {yields} Electrical properties were analyzed by XPS (Fermi levels of CdS films). {yields} Annealing treatment in oxidation atmosphere could shift Fermi level of CdS film to higher position and consequently improve the CdS/CdTe junction and performance of solar cells. -- Abstract: CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon-hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.

• OSTI ID: 22209991
• Journal Information: Materials Research Bulletin, Vol. 46, Issue 2; Other Information: Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON
CADMIUM SULFIDES
CADMIUM TELLURIDES
DEPOSITION
DEPOSITS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FERMI LEVEL
HYDROGEN
OXYGEN
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SURFACE PROPERTIES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY