Investigation of antiperovskite Mn{sub 3}CuN{sub x} film prepared by DC reactive magnetron sputtering
- Center for Condensed Matter and Materials Physics, Department of Physics, and Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Ministry of Education), Beihang University, Xueyuan Road 37, Beijing 100191 (China)
Antiperovskite Mn{sub 3}CuN{sub x} film was prepared by dc reactive magnetron sputtering. It is the first time to report an antiperovskite ternary nitride film. The composition and crystal structure were characterized by energy dispersive spectroscope (EDS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). From the XRD pattern, it displays a (1 0 0) preferential orientation. A comparative study on the properties of Mn{sub 3}CuN{sub x} film and the bulk sample was presented. The film exhibits an antiferromagnetic to paramagnetic transition around 135 K, similar with the bulk sample. With temperature, the resistivity of the film shows semiconductor-like behavior throughout the measured temperature region, whereas there is an abrupt drop around the magnetic transition for the bulk. The variable temperature XRD results indicate that the film did not display any structure transition and shows a normal linear thermal expansion property around the magnetic transition.
- OSTI ID:
- 22207382
- Journal Information:
- Materials Research Bulletin, Vol. 45, Issue 9; Other Information: Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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