Optical properties of Cd{sub 1-x}Zn{sub x}S thin films for CuInGaSe{sub 2} solar cell application
- The School of Physics, Peking University, Beijing 100871 (China)
- CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), Shanghai (China)
The photovoltaic Cd{sub 1-x}Zn{sub x}S thin films, fabricated by chemical bath deposition, were successfully used as n-type buffer layer in CuInGaSe{sub 2} (CIGS) solar cells. Comprehensive optical properties of the Cd{sub 1-x}Zn{sub x}S thin films were measured and modeled by spectroscopic ellipsometry (SE), which is proven to be an excellent and non-destructive technique to determine optical properties of thin films. The optical band gap of Cd{sub 1-x}Zn{sub x}S thin films can be tuned from 2.43 eV to 3.25 eV by controlling the Zn content (x) and deposition conditions. The wider-band-gap Cd{sub 1-x}Zn{sub x}S film was found to be favorable to improve the quantum efficiency in the wavelength range of 450-550 nm, resulting in an increase of short-circuits current for solar cells. From the characterization of quantum efficiency (QE) and current-voltage curve (J-V) of CIGS cells, the Cd{sub 1-x}Zn{sub x}S films (x = 0.32, 0.45) were demonstrated to significantly enhance the photovoltaic performance of CIGS solar cell. The highest efficiency (10.5%) of CIGS solar cell was obtained using a dense and homogenous Cd{sub 0.68}Zn{sub 0.32}S thin film as the buffer layer.
- OSTI ID:
- 22202843
- Journal Information:
- Materials Research Bulletin, Vol. 45, Issue 10; Other Information: Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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