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Title: Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires

Abstract

Here we present a detailed study on nitridation and structure transition in monoclinic gallium oxide ({beta}-Ga{sub 2}O{sub 3}) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga{sub 2}O{sub 3} nanowires in the gas of ammonia results in rich substructures including the Ga{sub 2}O{sub 3} phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. - Highlights: Black-Right-Pointing-Pointer Nitridation and structure transition of Ga{sub 2}O{sub 3} significantly depend on temperature. Black-Right-Pointing-Pointer G-N bonds form at lower temperatures but the Ga{sub 2}O{sub 3} lattice is still dominant. Black-Right-Pointing-Pointer Amorphous GaN coexists with crystalline Ga{sub 2}O{sub 3} at higher temperatures. Black-Right-Pointing-Pointer Crystalline GaN with distinct morphology is obtained at much higher temperatures.

Authors:
 [1];  [1]; ; ;  [2]; ;  [3];  [4]
  1. Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong (China)
  2. Electronic Microscopy Laboratory and State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, Hong Kong (China)
  3. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China)
  4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Hong Kong (China)
Publication Date:
OSTI Identifier:
22163155
Resource Type:
Journal Article
Journal Name:
Materials Characterization
Additional Journal Information:
Journal Volume: 73; Journal Issue: Complete; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1044-5803
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMMONIA; FIELD EMISSION; GALLIUM NITRIDES; GALLIUM OXIDES; HEAT TREATMENTS; MICROSTRUCTURE; MONOCLINIC LATTICES; MORPHOLOGY; NITRIDATION; QUANTUM WIRES; RAMAN SPECTROSCOPY; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY

Citation Formats

Ning, J.Q., Xu, S.J., E-mail: sjxu@hku.hk, Wang, P.W., Song, Y.P., Yu, D.P., Shan, Y.Y., Lee, S.T., and Yang, H. Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires. United States: N. p., 2012. Web. doi:10.1016/J.MATCHAR.2012.08.013.
Ning, J.Q., Xu, S.J., E-mail: sjxu@hku.hk, Wang, P.W., Song, Y.P., Yu, D.P., Shan, Y.Y., Lee, S.T., & Yang, H. Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires. United States. doi:10.1016/J.MATCHAR.2012.08.013.
Ning, J.Q., Xu, S.J., E-mail: sjxu@hku.hk, Wang, P.W., Song, Y.P., Yu, D.P., Shan, Y.Y., Lee, S.T., and Yang, H. Thu . "Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires". United States. doi:10.1016/J.MATCHAR.2012.08.013.
@article{osti_22163155,
title = {Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires},
author = {Ning, J.Q. and Xu, S.J., E-mail: sjxu@hku.hk and Wang, P.W. and Song, Y.P. and Yu, D.P. and Shan, Y.Y. and Lee, S.T. and Yang, H.},
abstractNote = {Here we present a detailed study on nitridation and structure transition in monoclinic gallium oxide ({beta}-Ga{sub 2}O{sub 3}) nanowires grown on Si substrates with chemical vapor phase epitaxy. The nanowires were systematically nitridated at different temperatures. Their morphologies and microstructures were precisely characterized using field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and confocal micro-Raman spectroscopy. It is found that heat treatment of Ga{sub 2}O{sub 3} nanowires in the gas of ammonia results in rich substructures including the Ga{sub 2}O{sub 3} phase, the crystalline GaN phase, and other meta structures. The identification of these structures helps to understand some interesting phenomena observed in nanostructures, such as the microstructural origin of the unknown Raman lines in GaN nanowires. - Highlights: Black-Right-Pointing-Pointer Nitridation and structure transition of Ga{sub 2}O{sub 3} significantly depend on temperature. Black-Right-Pointing-Pointer G-N bonds form at lower temperatures but the Ga{sub 2}O{sub 3} lattice is still dominant. Black-Right-Pointing-Pointer Amorphous GaN coexists with crystalline Ga{sub 2}O{sub 3} at higher temperatures. Black-Right-Pointing-Pointer Crystalline GaN with distinct morphology is obtained at much higher temperatures.},
doi = {10.1016/J.MATCHAR.2012.08.013},
journal = {Materials Characterization},
issn = {1044-5803},
number = Complete,
volume = 73,
place = {United States},
year = {2012},
month = {11}
}