Formation mechanisms of embedded nanocrystals in SiN{sub x}

Journal Article · Mon Jun 17 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4810917· OSTI ID:22163044

Canniff, J. C. ^[1]; Wood, A. W. ^[2]; Goldman, R. S. ^[1]

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1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

We have investigated the formation of embedded nanocrystals (NCs) in SiN{sub x} using Ga{sup +} focused-ion beam irradiation of SiN{sub x} membranes, followed by rapid thermal annealing (RTA). During irradiation, redeposition is enhanced by developing side walls, leading to enhanced near-surface [Ga] and [Si]. Subsequent RTA leads to the formation of Si and Ga NCs embedded in SiN{sub x}. When the ratio of the irradiated area to the sidewall area is increased, redeposition is limited, and SiN{sub x} and GaN NCs are also apparent. We discuss the effect of limited redeposition on NC formation and the catalytic effect of Ga on Si NC nucleation and growth.

• OSTI ID: 22163044
• Journal Information: Applied Physics Letters, Vol. 102, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL GROWTH
GALLIUM IONS
GALLIUM NITRIDES
ION BEAMS
ION IMPLANTATION
IRRADIATION
MEMBRANES
NANOSTRUCTURES
NUCLEATION
SILICON COMPOUNDS
SILICON NITRIDES
SURFACES