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Title: Magnetic properties of gadolinium substituted Bi{sub 2}Te{sub 3} thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4812292· OSTI ID:22163040
 [1]; ; ;  [2]; ; ;  [3];  [4]; ;  [1];  [5]
  1. Department of Physics, Stanford University, Stanford, California 94305 (United States)
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  3. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)
  4. Geballe Laboratory for Advanced Materials, 476 Lomita Mall, Stanford University, Stanford, California 94305 (United States)
  5. Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom)

Thin film GdBiTe{sub 3} has been proposed as a candidate material in which to observe the quantum anomalous Hall effect. As a thermal non-equilibrium deposition method, molecular beam epitaxy (MBE) has the ability to incorporate large amounts of Gd into Bi{sub 2}Te{sub 3} crystal structures. High-quality rhombohedral (Gd{sub x}Bi{sub 1-x}){sub 2}Te{sub 3} films with substitutional Gd concentrations of x {<=} 0.4 were grown by MBE. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact up to the highest Gd concentration. Magnetoresistance measurements show weak antilocalization, indicating strong spin orbit interaction. Magnetometry reveals that the films are paramagnetic with a magnetic moment of 6.93 {mu}{sub B} per Gd{sup 3+} ion.

OSTI ID:
22163040
Journal Information:
Applied Physics Letters, Vol. 102, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English