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Title: Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory

Abstract

Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

Authors:
 [1]; ; ; ;  [1]; ; ;  [2]
  1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  2. Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)
Publication Date:
OSTI Identifier:
22163031
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY ALLOYS; CHEMICAL BONDS; CRYSTALLIZATION; DOPED MATERIALS; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; GERMANIUM ALLOYS; RETENTION; STABILITY; TELLURIUM ALLOYS; TERNARY ALLOY SYSTEMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Lu, Yegang, Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, Graduate School of Chinese Academy of Sciences, Beijing 100049, Zhang, Zhonghua, Song, Sannian, Cheng, Limin, Song, Zhitang, Shen, Xiang, Wang, Guoxiang, and Dai, Shixun. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. United States: N. p., 2013. Web. doi:10.1063/1.4809735.
Lu, Yegang, Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, Graduate School of Chinese Academy of Sciences, Beijing 100049, Zhang, Zhonghua, Song, Sannian, Cheng, Limin, Song, Zhitang, Shen, Xiang, Wang, Guoxiang, & Dai, Shixun. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. United States. doi:10.1063/1.4809735.
Lu, Yegang, Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, Graduate School of Chinese Academy of Sciences, Beijing 100049, Zhang, Zhonghua, Song, Sannian, Cheng, Limin, Song, Zhitang, Shen, Xiang, Wang, Guoxiang, and Dai, Shixun. Mon . "Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory". United States. doi:10.1063/1.4809735.
@article{osti_22163031,
title = {Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory},
author = {Lu, Yegang and Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 and Graduate School of Chinese Academy of Sciences, Beijing 100049 and Zhang, Zhonghua and Song, Sannian and Cheng, Limin and Song, Zhitang and Shen, Xiang and Wang, Guoxiang and Dai, Shixun},
abstractNote = {Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.},
doi = {10.1063/1.4809735},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 102,
place = {United States},
year = {2013},
month = {6}
}