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Title: Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

Abstract

Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

Authors:
; ; ; ;  [1]; ;  [2]
  1. CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France)
  2. NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)
Publication Date:
OSTI Identifier:
22162976
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 113; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; AVAILABILITY; CHEMICAL VAPOR DEPOSITION; ELECTRON DIFFRACTION; GRAPHENE; INTERFACES; PHOTOEMISSION; PROPANE; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDES; SURFACES; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Michon, A., Vezian, S., Roudon, E., Lefebvre, D., Portail, M., Zielinski, M., and Chassagne, T. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition. United States: N. p., 2013. Web. doi:10.1063/1.4806998.
Michon, A., Vezian, S., Roudon, E., Lefebvre, D., Portail, M., Zielinski, M., & Chassagne, T. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition. United States. https://doi.org/10.1063/1.4806998
Michon, A., Vezian, S., Roudon, E., Lefebvre, D., Portail, M., Zielinski, M., and Chassagne, T. 2013. "Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition". United States. https://doi.org/10.1063/1.4806998.
@article{osti_22162976,
title = {Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition},
author = {Michon, A. and Vezian, S. and Roudon, E. and Lefebvre, D. and Portail, M. and Zielinski, M. and Chassagne, T.},
abstractNote = {Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.},
doi = {10.1063/1.4806998},
url = {https://www.osti.gov/biblio/22162976}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 20,
volume = 113,
place = {United States},
year = {Tue May 28 00:00:00 EDT 2013},
month = {Tue May 28 00:00:00 EDT 2013}
}