skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process

Abstract

Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.

Authors:
; ;  [1];  [2]
  1. Laser Component Department, Laser Zentrum Hannover e.V., Hollerithallee 8, 30149 Hannover (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
22162963
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 102; Journal Issue: 22; Other Information: (c) 2013 Copyright-Sign 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BEAMS; DEPOSITION; DISTRIBUTION; ELECTRIC FIELDS; ELECTROMAGNETIC FIELDS; ION BEAMS; MAGNETIC FIELDS; MODIFICATIONS; PLASMA; SILICON; SOLENOIDS; SPUTTERING; TITANIUM

Citation Formats

Malobabic, Sina, Jupe, Marco, Ristau, Detlev, and Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universitaet Hannover, Hannover. Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process. United States: N. p., 2013. Web. doi:10.1063/1.4807793.
Malobabic, Sina, Jupe, Marco, Ristau, Detlev, & Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universitaet Hannover, Hannover. Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process. United States. doi:10.1063/1.4807793.
Malobabic, Sina, Jupe, Marco, Ristau, Detlev, and Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universitaet Hannover, Hannover. Mon . "Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process". United States. doi:10.1063/1.4807793.
@article{osti_22162963,
title = {Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process},
author = {Malobabic, Sina and Jupe, Marco and Ristau, Detlev and Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universitaet Hannover, Hannover},
abstractNote = {Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.},
doi = {10.1063/1.4807793},
journal = {Applied Physics Letters},
number = 22,
volume = 102,
place = {United States},
year = {Mon Jun 03 00:00:00 EDT 2013},
month = {Mon Jun 03 00:00:00 EDT 2013}
}
  • (Ba{sub 0.5},Sr{sub 0.5})TiO{sub 3} (BST) thin films were deposited on MgO, Si, SiO{sub 2} and Ir surfaces by ion beam sputter deposition in oxygen at 700&hthinsp;{degree}C. {ital In situ} spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5{endash}4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO{sub 2}/Si structure were examined by SE and Auger electron spectroscopy depthmore » profiles. Subcutaneous oxidation in the BST/Ir structure was observed by {ital in situ} SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700&hthinsp;{degree}C. A study of the thermal stability of the Ir/TiN/SiO{sub 2}/Si structure in oxygen at 700&hthinsp;{degree}C was carried out using {ital in situ} SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO{sub 2}/Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of {ital in situ} SE and TOF-MSRI provides a powerful methodology for {ital in situ} monitoring of complex oxide film growth and postannealing processes. {copyright} {ital 1999 American Vacuum Society.}« less
  • Ba{sub 0.5},Sr{sub 0.5}TiO{sub 3} (BST) thin films were deposited on MgO, Si, SiO{sub 2} and Ir surfaces by ion beam sputter deposition in oxygen at 700 {sup o}C. In situ spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5-4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO{sub 2}/Si structure were examined by SE and Auger electron spectroscopymore » depth profiles. Subcutaneous oxidation in the BST/Ir structure was observed by in situ SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700 {sup o}C. A study of the thermal stability of the Ir/TiN/SiO{sub 2}/Si structure in oxygen at 700 {sup o}C was carried out using in situ SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO{sub 2}/Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of in situ SE and TOF-MSRI provides a powerful methodology for in situ monitoring of complex oxide film growth and postannealing processes.« less
  • We measured the spatial dependence of chemical composition of ion beam sputtered GdTbFe thin films, which is the recording medium in an erasable magneto-optical disk. We found that films were enriched in Fe, relative to the target composition, directly underneath the target and became increasingly Fe rich as the Ar{sup +} ion energy decreased. We ascribe this characteristic at low incident ion energies to a mass-related sputtering effect, in which the lighter element (Fe) is preferentially sputtered normal to the target surface. At higher incident ion energies we examined the contribution to spatial inhomogeneity from resputtering of Gd and Tbmore » at the growing film by energetic reflected neutrals.« less
  • W/Si multilayers having 5, 7, 9, 13, 17, and 25 layers have been deposited on c-Si substrates by Ion Beam Sputtering technique and have been characterized by specular and diffused grazing incidence X-ray reflectivity measurements. Information regarding the density, thickness and interface widths of individual layers of the multilayer stacks have been obtained from the theoretical fitting of the specular reflectivity spectra while fitting of the diffused X-ray reflectivity have yielded information regarding roughness and diffusivity at the individual interfaces along with the in-plane correlation lengths of roughness of the individual layers and the vertical correlation length of the wholemore » multilayer structure. Investigations have been carried out on the different behavior of W-on-Si and Si-on-W interfaces and on the variation of the above parameters with the increase in number of layers in the multilayer structures.« less
  • Er-doped TiO{sub 2−x}N{sub x} films were grown by Ar{sup +} ion-beam sputtering a Ti + Er target under different N{sub 2} + O{sub 2} high-purity atmospheres. The compositional-structural properties of the samples were investigated after thermal annealing the films up to 1000 °C under a flow of oxygen. Sample characterization included x-ray photoelectron spectroscopy, grazing incidence x-ray diffraction, Raman scattering, and photoluminescence experiments. According to the experimental data, both composition and atomic structure of the samples were very sensitive to the growth conditions and annealing temperature. In the as-deposited form, the N-rich TiO{sub 2−x}N{sub x} films presented TiN crystallites and nomore » photoluminescence. As the thermal treatments proceed, the films were transformed into TiO{sub 2} and Er{sup 3+}-related light emission were observed in the visible and near-infrared ranges at room-temperature. Whereas the development of TiO{sub 2} occurred due to the insertion-diffusion of oxygen in the films, light emission originated because of optical bandgap widening and/or structural-chemical variations in the vicinity of the Er{sup 3+} ions. Finally, the photoluminescence results in the visible range suggested the potential of the present samples in producing an optically based temperature sensor in the ∼150–500 K range.« less