Single InAs quantum dot coupled to different 'environments' in one wafer for quantum photonics

Journal Article · Mon May 20 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4807502· OSTI ID:22162939

Yu, Ying; Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan ^[1]

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1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

Self assembled small InAs quantum dots (SQDs) were formed in various densities and environments using gradient InAs deposition on a non-rotating GaAs substrate. Two SQD environments (SQD I and SQD II) were characterized. SQD I featured SQDs surrounded by large QDs, and SQD II featured individual SQDs in the wetting layer (WL). Micro-photoluminescence of single QDs embedded in a cavity under various excitation powers and electric fields gave insight into carrier transport processes. Potential fluctuations of the WL in SQD II, induced by charge redistribution, show promise for charge-tunable QD devices; SQD I shows higher luminescence intensity as a single-photon source.

• OSTI ID: 22162939
• Journal Information: Applied Physics Letters, Vol. 102, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIERS
DENSITY
DEPOSITION
ELECTRIC FIELDS
EXCITATION
FLUCTUATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
QUANTUM DOTS
RECOMBINATION
SEMICONDUCTOR MATERIALS