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Title: Electron microscopy investigations of purity of AlN interlayer in Al{sub x}Ga{sub 1-x}N/GaN heterostructures grown by plasma assisted molecular beam epitaxy

Abstract

The electron microscopy was used to characterize the AlN interlayer in Al{sub x}Ga{sub 1-x}N/AlN/GaN heterostructures grown by plasma assisted molecular beam epitaxy (PAMBE). We show that the AlN interlayer grown by PAMBE is without gallium and oxygen incorporation and the interfaces are coherent. The AlN interlayer has the ABAB stacking of lattice planes as expected for the wurtzite phase. High purity of AlN interlayer with the ABAB stacking leads to larger conduction band offset along with stronger polarization effects. Our studies show that the origin of lower sheet resistance obtained by PAMBE is the purity of AlN interlayer.

Authors:
 [1]; ; ;  [2];  [3]
  1. Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500 058 (India)
  2. Solid State Physics Laboratory, Lucknow Road, Delhi 110 054 (India)
  3. Directorate of Materials, DRDO Bhawan, New Delhi 110 011 (India)
Publication Date:
OSTI Identifier:
22162918
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 102; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON MICROSCOPY; GALLIUM NITRIDES; HETEROJUNCTIONS; IMPURITIES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; PLASMA; POLARIZATION; SEMICONDUCTOR MATERIALS

Citation Formats

Sridhara Rao, D. V., Jain, Anubha, Lamba, Sushil, Muralidharan, R., and Muraleedharan, K. Electron microscopy investigations of purity of AlN interlayer in Al{sub x}Ga{sub 1-x}N/GaN heterostructures grown by plasma assisted molecular beam epitaxy. United States: N. p., 2013. Web. doi:10.1063/1.4805027.
Sridhara Rao, D. V., Jain, Anubha, Lamba, Sushil, Muralidharan, R., & Muraleedharan, K. Electron microscopy investigations of purity of AlN interlayer in Al{sub x}Ga{sub 1-x}N/GaN heterostructures grown by plasma assisted molecular beam epitaxy. United States. https://doi.org/10.1063/1.4805027
Sridhara Rao, D. V., Jain, Anubha, Lamba, Sushil, Muralidharan, R., and Muraleedharan, K. 2013. "Electron microscopy investigations of purity of AlN interlayer in Al{sub x}Ga{sub 1-x}N/GaN heterostructures grown by plasma assisted molecular beam epitaxy". United States. https://doi.org/10.1063/1.4805027.
@article{osti_22162918,
title = {Electron microscopy investigations of purity of AlN interlayer in Al{sub x}Ga{sub 1-x}N/GaN heterostructures grown by plasma assisted molecular beam epitaxy},
author = {Sridhara Rao, D. V. and Jain, Anubha and Lamba, Sushil and Muralidharan, R. and Muraleedharan, K.},
abstractNote = {The electron microscopy was used to characterize the AlN interlayer in Al{sub x}Ga{sub 1-x}N/AlN/GaN heterostructures grown by plasma assisted molecular beam epitaxy (PAMBE). We show that the AlN interlayer grown by PAMBE is without gallium and oxygen incorporation and the interfaces are coherent. The AlN interlayer has the ABAB stacking of lattice planes as expected for the wurtzite phase. High purity of AlN interlayer with the ABAB stacking leads to larger conduction band offset along with stronger polarization effects. Our studies show that the origin of lower sheet resistance obtained by PAMBE is the purity of AlN interlayer.},
doi = {10.1063/1.4805027},
url = {https://www.osti.gov/biblio/22162918}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 102,
place = {United States},
year = {Mon May 13 00:00:00 EDT 2013},
month = {Mon May 13 00:00:00 EDT 2013}
}