The effect of dielectric confinement on photoluminescence of In{sub 2}O{sub 3}-SiO{sub 2} nanocomposite thin films incorporated by nitrogen

Journal Article · Tue May 14 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4803877· OSTI ID:22162910

Lyu, Yang-Ru; Hsieh, Tsung-Eong ^[1]

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1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010 Taiwan (China)

Nanocomposite thin films containing In{sub 2}O{sub 3} nanoparticles were prepared by the target-attachment sputtering utilizing the InN pellets and allowing the N{sub 2} inlet gas flow during the deposition process. The x-ray photoelectron spectroscopy revealed that the chemical composition of In{sub 2}O{sub 3} nanoparticles becomes InO{sub x}N{sub y} and the SiO{sub x}N{sub y} phase forms in the matrix of nanocomposite layer. Photoluminescence analysis indicated that the dielectric confinement effect induced by the N-incorporation tends to restrain the green emission of nanocomposite layers due to the presence of surface polarization on nanoparticles. Suppression of blue emission was also observed due to the elimination of oxygen vacancies in In{sub 2}O{sub 3} nanoparticles. Furthermore, the N elements might occupy the oxygen lattice sites and generate a new defect level, N{sub O}{sup -}, to induce the violet emission. Analytical results confirmed the mechanisms of green and blue emissions of the nanocomposite thin films containing In{sub 2}O{sub 3} nanoparticles reported previously.

• OSTI ID: 22162910
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 18; Other Information: (c) 2013 Copyright-Sign 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL COMPOSITION
COMPOSITE MATERIALS
CRYSTAL DEFECTS
DEPOSITION
DIELECTRIC MATERIALS
GAS FLOW
INDIUM NITRIDES
INDIUM OXIDES
NANOSTRUCTURES
PHOTOLUMINESCENCE
POLARIZATION
SILICON OXIDES
SPUTTERING
SURFACES
THIN FILMS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY