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Title: Molecular beam epitaxy-grown wurtzite MgS thin films for solar-blind ultra-violet detection

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4803000· OSTI ID:22162877
;  [1]; ; ; ;  [2];  [3];  [4]
  1. Nano Science and Nano Technology Program, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China)
  2. Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China)
  3. Faculty of Science and Technology, University of Macau, Macau, People's Republic of China (China)
  4. Department of Electrical and Electronics Engineering, University of Macau, Macau, People's Republic of China (China)

Molecular beam epitaxy grown MgS on GaAs(111)B substrate was resulted in wurtzite phase, as demonstrated by detailed structural characterizations. Phenomenological arguments were used to account for why wurtzite phase is preferred over zincblende phase or its most stable rocksalt phase. Results of photoresponse and reflectance measurements performed on wurtzite MgS photodiodes suggest a direct bandgap at around 5.1 eV. Their response peaks at 245 nm with quantum efficiency of 9.9% and enjoys rejection of more than three orders at 320 nm and close to five orders at longer wavelengths, proving the photodiodes highly competitive in solar-blind ultraviolet detection.

OSTI ID:
22162877
Journal Information:
Applied Physics Letters, Vol. 102, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English